Invention Grant
US09054302B2 Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
有权
垂直自旋转移转矩记忆（STTM）装置具有增强的稳定性和形成方法
- Patent Title: Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
- Patent Title (中): 垂直自旋转移转矩记忆（STTM）装置具有增强的稳定性和形成方法
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Application No.: US14313690Application Date: 2014-06-24
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Publication No.: US09054302B2Publication Date: 2015-06-09
- Inventor: Brian S. Doyle , Charles C. Kuo , Kaan Oguz , Uday Shah , Elijah V. Karpov , Roksana Golizadeh Mojarad , Mark L. Doczy , Robert S. Chau
- Applicant: Brian S. Doyle , Charles C. Kuo , Kaan Oguz , Uday Shah , Elijah V. Karpov , Roksana Golizadeh Mojarad , Mark L. Doczy , Robert S. Chau
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/12 ; H01L43/08 ; H01F10/32 ; H01L43/10 ; H01L27/22
Abstract:
Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer.
Public/Granted literature
- US20140308760A1 PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANCED STABILITY AND METHOD TO FORM SAME Public/Granted day:2014-10-16
Information query
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