Invention Grant
US09059012B2 Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same
有权
具有用于分离生长衬底的空隙的外延层晶片和使用其形成的半导体器件
- Patent Title: Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same
- Patent Title (中): 具有用于分离生长衬底的空隙的外延层晶片和使用其形成的半导体器件
-
Application No.: US14105919Application Date: 2013-12-13
-
Publication No.: US09059012B2Publication Date: 2015-06-16
- Inventor: Jong Min Jang , Kyu Ho Lee , Chang Suk Han , Hwa Mok Kim , Daewoong Suh , Chi Hyun In , Jong Hyeon Chae
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2012-0146329 20121214; KR10-2012-0150389 20121221
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L21/02 ; H01L29/06 ; H01L33/20 ; H01L33/00
Abstract:
An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region. The epitaxial layer can be separated from the growth substrate by applying chemical lift-off or stress lift-off, at the void.
Public/Granted literature
Information query
IPC分类:
