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公开(公告)号：US20160155628A1
公开(公告)日：2016-06-02
申请号：US14958793
申请日：2015-12-03
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Suk Han , Hwa Mok Kim , Mi So Ko , A Ram Cha Lee , Daewoong Suh
CPC classification number: H01L21/02032 , H01L21/0265 , H01L29/2003 , H01L29/34 , H01L33/0075 , H01L33/12
Abstract: Disclosed are a substrate regeneration method and a regenerated substrate. The substrate regeneration method comprises preparing a substrate having a surface separated from an epitaxial layer. The separated surface includes a convex portion and a concave portion, and the convex portion is comparatively flatter than the concave portion. A crystalline restoration layer is grown on the separated surface. The crystalline restoration layer is grown on the convex portion. Furthermore, a surface roughness improvement layer is grown on the crystalline restoration layer, thereby providing a continuous surface. Accordingly, it is possible to provide a regenerated substrate, which has a flat surface, without using physical polishing or chemical etching technology.
Abstract translation: 公开了一种基板再生方法和再生基板。 衬底再生方法包括制备具有与外延层分离的表面的衬底。 分离面包括凸部和凹部，凸部比凹部比较平坦。 在分离的表面上生长晶体恢复层。 晶体恢复层在凸部上生长。 此外，在结晶恢复层上生长表面粗糙度改善层，从而提供连续的表面。 因此，可以提供具有平坦表面的再生基板，而不使用物理抛光或化学蚀刻技术。
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2.发明申请VERTICAL ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开垂直超紫外线发光装置及其制造方法公开(公告)号：US20160072015A1
公开(公告)日：2016-03-10
申请号：US14846592
申请日：2015-09-04
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jung Hwan Hwang , Chang Suk Han , Chang Geun Jang , Hwa Mok Kim
CPC classification number: H01L33/06 , H01L25/167 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/486 , H01L2924/0002 , H01L2933/0016 , H01L2933/0033 , H01L2933/0091 , H01L2924/00
Abstract: Disclosed herein are a vertical ultraviolet light emitting device including: a p-type semiconductor layer including Al; an active layer positioned on the p-type semiconductor layer and including the Al; an n-type semiconductor layer positioned on the active layer and including the Al; a metal contact layer positioned on the n-type semiconductor layer and doped with an n type; and a pad formed on the metal contact layer, wherein the metal contact layer has an Al content lower than that of the n-type semiconductor layer, and a method for manufacturing the same. According to the exemplary embodiments of the present invention, the metal contact layer is formed on the n-type semiconductor layer to allow the metal contact layer instead of the n-type semiconductor layer including AlGaN to act as the contact layer, thereby effectively improving the n type contact characteristics of the vertical ultraviolet light emitting device.
Abstract translation: 本文公开了一种垂直紫外线发射装置，包括：包括Al的p型半导体层; 位于p型半导体层上且包括Al的有源层; 位于有源层上且包括Al的n型半导体层; 位于n型半导体层上并掺杂有n型的金属接触层; 以及形成在所述金属接触层上的焊盘及其制造方法，其中，所述金属接触层的Al含量低于所述n型半导体层的Al含量。 根据本发明的示例性实施例，金属接触层形成在n型半导体层上，以允许金属接触层代替包括AlGaN的n型半导体层作为接触层，从而有效地改善了 垂直紫外线发射装置的n型接触特性。
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3.发明授权Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same 有权具有用于分离生长衬底的空隙的外延层晶片和使用其形成的半导体器件公开(公告)号：US09059012B2
公开(公告)日：2015-06-16
申请号：US14105919
申请日：2013-12-13
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min Jang , Kyu Ho Lee , Chang Suk Han , Hwa Mok Kim , Daewoong Suh , Chi Hyun In , Jong Hyeon Chae
CPC classification number: H01L33/22 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L29/0657 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/24 , H01L33/32
Abstract: An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region. The epitaxial layer can be separated from the growth substrate by applying chemical lift-off or stress lift-off, at the void.
Abstract translation: 具有用于分离衬底的空隙的外延晶片和使用其制造的半导体器件。 外延晶片包括衬底，设置在衬底上并包括掩模区域和开口区域的掩模图案以及覆盖掩模图案的外延层。 外延层包括设置在掩蔽区域上的空隙。 通过在空隙处施加化学剥离或应力剥离，外延层可以与生长衬底分离。
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公开(公告)号：US09716210B2
公开(公告)日：2017-07-25
申请号：US14690036
申请日：2015-04-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
CPC classification number: H01L33/06 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/32
Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.
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公开(公告)号：US20160104816A1
公开(公告)日：2016-04-14
申请号：US14893466
申请日：2014-04-08
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Sung Ho An , Chang Suk Han , Jun Ho Yun , Chae Hon Kim , Si Hoon Lyu
Abstract: Provided are a light-emitting element and a method for preparing same. The method includes a method for growing a p-type semiconductor layer having a low-concentration doping layer, an undoped layer and a high-concentration doping layer. During the growth of the low-concentration doping layer and the high-concentration doping layer, both N2 gas and H2 gas are supplied, whereas, during the growth of the undoped layer, the supply of H2 gas is shut off and N2 gas is supplied. Accordingly, the doping concentration of Mg contained in the undoped layer can be further lowered, and thus, hole mobility within the p-type semiconductor layer can be enhanced.
Abstract translation: 提供发光元件及其制备方法。 该方法包括用于生长具有低浓度掺杂层，未掺杂层和高浓度掺杂层的p型半导体层的方法。 在低浓度掺杂层和高浓度掺杂层的生长期间，供应N 2气体和H 2气体，而在未掺杂层生长期间，关闭H 2气体的供应并提供N 2气体 。 因此，可以进一步降低包含在未掺杂层中的Mg的掺杂浓度，从而可以提高p型半导体层内的空穴迁移率。
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Patent Agency Ranking
6.发明申请EPITAXIAL LAYER WAFER HAVING VOID FOR SEPARATING GROWTH SUBSTRATE THEREFROM AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME 审中-公开具有用于分离其生长基底的异常层的波浪形波片和使用其制造的半导体器件公开(公告)号：US20150295132A1
公开(公告)日：2015-10-15
申请号：US14726031
申请日：2015-05-29
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min JANG , Kyu Ho Lee , Chang Suk Han , Hwa Mok Kim , Daewoong Suh , Chi Hyun In , Jong Hyeon Chae
CPC classification number: H01L33/22 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L29/0657 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/24 , H01L33/32
Abstract: An epitaxial wafer includes a growth substrate, a mask pattern disposed on the growth substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern and including a first void disposed on the masking region. The first void includes a lower void disposed between a lower surface of the epitaxial layer and the masking region, and an upper void extending from the lower void into the epitaxial layer, the lower void having a greater width than the upper void.
Abstract translation: 外延晶片包括生长衬底，设置在生长衬底上并包括掩模区域和开口区域的掩模图案，以及覆盖掩模图案并且包括设置在掩蔽区域上的第一空隙的外延层。 第一空隙包括设置在外延层的下表面和掩蔽区域之间的下部空隙和从下部空隙延伸到外延层中的上部空隙，下部空隙具有比上部空隙更大的宽度。
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公开(公告)号：US10418514B2
公开(公告)日：2019-09-17
申请号：US15643403
申请日：2017-07-06
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.
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公开(公告)号：US09859108B2
公开(公告)日：2018-01-02
申请号：US14958793
申请日：2015-12-03
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Suk Han , Hwa Mok Kim , Mi So Ko , A Ram Cha Lee , Daewoong Suh
CPC classification number: H01L21/02032 , H01L21/0265 , H01L29/2003 , H01L29/34 , H01L33/0075 , H01L33/12
Abstract: Disclosed are a substrate regeneration method and a regenerated substrate. The substrate regeneration method comprises preparing a substrate having a surface separated from an epitaxial layer. The separated surface includes a convex portion and a concave portion, and the convex portion is comparatively flatter than the concave portion. A crystalline restoration layer is grown on the separated surface. The crystalline restoration layer is grown on the convex portion. Furthermore, a surface roughness improvement layer is grown on the crystalline restoration layer, thereby providing a continuous surface. Accordingly, it is possible to provide a regenerated substrate, which has a flat surface, without using physical polishing or chemical etching technology.
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公开(公告)号：US09543476B2
公开(公告)日：2017-01-10
申请号：US14556033
申请日：2014-11-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Chang Suk Han , Hyo Shik Choi
Abstract: A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers.
Abstract translation: 提供了一种UV发光二极管及其制造方法。 发光二极管包括在n型氮化物基半导体层和p型氮化物基半导体层之间的有源区，其中有源区包括多个含有Al的势垒层，多个阱层含有Al和 交替布置有阻挡层，以及至少一个调理层。 每个调理层位于阱层和与阱层相邻的势垒层之间，并由二元氮化物半导体形成。 调节层的设计可以减少有源区的应力，同时允许均匀地控制阱层和/或阻挡层的组成。
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10.发明授权Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same 有权具有用于分离生长衬底的空隙的外延层晶片和使用其形成的半导体器件公开(公告)号：US09356191B2
公开(公告)日：2016-05-31
申请号：US14726031
申请日：2015-05-29
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min Jang , Kyu Ho Lee , Chang Suk Han , Hwa Mok Kim , Daewoong Suh , Chi Hyun In , Jong Hyeon Chae
CPC classification number: H01L33/22 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L29/0657 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/24 , H01L33/32
Abstract: An epitaxial wafer includes a growth substrate, a mask pattern disposed on the growth substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern and including a first void disposed on the masking region. The first void includes a lower void disposed between a lower surface of the epitaxial layer and the masking region, and an upper void extending from the lower void into the epitaxial layer, the lower void having a greater width than the upper void.
Abstract translation: 外延晶片包括生长衬底，设置在生长衬底上并包括掩模区域和开口区域的掩模图案，以及覆盖掩模图案并且包括设置在掩蔽区域上的第一空隙的外延层。 第一空隙包括设置在外延层的下表面和掩蔽区域之间的下部空隙和从下部空隙延伸到外延层中的上部空隙，下部空隙具有比上部空隙更大的宽度。
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