Invention Grant
US09059218B2 Reducing gate expansion after source and drain implant in gate last process
有权
源极和漏极植入后在栅极最后工艺中减小栅极扩展
- Patent Title: Reducing gate expansion after source and drain implant in gate last process
- Patent Title (中): 源极和漏极植入后在栅极最后工艺中减小栅极扩展
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Application No.: US14030506Application Date: 2013-09-18
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Publication No.: US09059218B2Publication Date: 2015-06-16
- Inventor: Bharat Krishnan , Jinping Liu , Zhao Lun , Hui Zhan , Bongki Lee
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Wayne F. Reinke, Esq.
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L29/66 ; H01L29/78 ; H01L21/225
Abstract:
A semiconductor structure includes a semiconductor substrate, an active region and a dummy gate structure disposed over the active region. A sacrificial conformal layer, including a bottom oxide layer and a top nitride layer are provided over the dummy gate structure and active region to protect the dummy gate during source and drain implantation. The active region is implanted using dopants such as, a n-type dopant or a p-type dopant to create a source region and a drain region in the active region, after which the sacrificial conformal layer is removed.
Public/Granted literature
- US20150076622A1 REDUCING GATE EXPANSION AFTER SOURCE AND DRAIN IMPLANT IN GATE LAST PROCESS Public/Granted day:2015-03-19
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