Invention Grant
- Patent Title: Compositions for the currentless deposition of ternary materials for use in the semiconductor industry
- Patent Title (中): 用于半导体行业的三元材料的无水沉积的组合物
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Application No.: US12916887Application Date: 2010-11-01
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Publication No.: US09062378B2Publication Date: 2015-06-23
- Inventor: Alexandra Wirth
- Applicant: Alexandra Wirth
- Applicant Address: DE Ludwigshafen
- Assignee: BASF AKTIENGESELLSCHAFT
- Current Assignee: BASF AKTIENGESELLSCHAFT
- Current Assignee Address: DE Ludwigshafen
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: DE10321113 20030509; DE10347809 20031010
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C23C10/50 ; C23C18/50 ; H01L21/288 ; H01L23/532
Abstract:
The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.
Public/Granted literature
- US20110124191A1 COMPOSITIONS FOR THE CURRENTLESS DEPOSITION OF TERNARY MATERIALS FOR USE IN THE SEMICONDUCTOR INDUSTRY Public/Granted day:2011-05-26
Information query
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