公开(公告)号：US07850770B2

公开(公告)日：2010-12-14

申请号：US10555326

申请日：2004-04-22

申请人： Alexandra Wirth

发明人： Alexandra Wirth

IPC分类号： C23C18/36

CPC分类号： C23C18/50 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76849 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.

摘要翻译： 本发明涉及在半导体技术中通过无电解方法沉积的NiMR型（其中M = Mo，W，Re或Cr，R = B或P）的三元含镍金属合金的使用。 特别地，本发明涉及这些沉积的三元含镍金属合金作为阻挡材料或用作防止半导体部件中的铜的扩散和电迁移的选择性封装材料的用途。

公开(公告)号：US09062378B2

公开(公告)日：2015-06-23

申请号：US12916887

申请日：2010-11-01

申请人： Alexandra Wirth

发明人： Alexandra Wirth

IPC分类号： H01L21/768 ,  C23C10/50 ,  C23C18/50 ,  H01L21/288 ,  H01L23/532

CPC分类号： C23C18/50 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76849 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.

摘要翻译： 本发明涉及在半导体技术中通过无电解方法沉积的NiMR型（其中M = Mo，W，Re或Cr，R = B或P）的三元含镍金属合金的使用。 特别地，本发明涉及这些沉积的三元含镍金属合金作为阻挡材料或用作防止半导体部件中的铜的扩散和电迁移的选择性封装材料的用途。

公开(公告)号：US20060278123A1

公开(公告)日：2006-12-14

申请号：US10555326

申请日：2004-04-22

申请人： Alexandra Wirth

发明人： Alexandra Wirth

IPC分类号： C23C18/48 ,  B05D3/04 ,  B05D1/18

CPC分类号： C23C18/50 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76849 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.

摘要翻译： 本发明涉及在半导体技术中通过无电解方法沉积的NiMR型（其中M = Mo，W，Re或Cr，R = B或P）的三元含镍金属合金的使用。 特别地，本发明涉及这些沉积的三元含镍金属合金作为阻挡材料或用作防止半导体部件中的铜的扩散和电迁移的选择性封装材料的用途。