-
1.发明授权公开(公告)号：US09062378B2
公开(公告)日：2015-06-23
申请号：US12916887
申请日：2010-11-01
Applicant: Alexandra Wirth
Inventor： Alexandra Wirth
IPC: H01L21/768 , C23C10/50 , C23C18/50 , H01L21/288 , H01L23/532
CPC classification number: C23C18/50 , H01L21/288 , H01L21/76843 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.
Abstract translation: 本发明涉及在半导体技术中通过无电解方法沉积的NiMR型（其中M = Mo，W，Re或Cr，R = B或P）的三元含镍金属合金的使用。 特别地，本发明涉及这些沉积的三元含镍金属合金作为阻挡材料或用作防止半导体部件中的铜的扩散和电迁移的选择性封装材料的用途。
-
2.发明申请公开(公告)号：US20060278123A1
公开(公告)日：2006-12-14
申请号：US10555326
申请日：2004-04-22
Applicant: Alexandra Wirth
Inventor： Alexandra Wirth
CPC classification number: C23C18/50 , H01L21/288 , H01L21/76843 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.
Abstract translation: 本发明涉及在半导体技术中通过无电解方法沉积的NiMR型（其中M = Mo，W，Re或Cr，R = B或P）的三元含镍金属合金的使用。 特别地，本发明涉及这些沉积的三元含镍金属合金作为阻挡材料或用作防止半导体部件中的铜的扩散和电迁移的选择性封装材料的用途。
-
3.发明申请COMPOSITIONS FOR THE CURRENTLESS DEPOSITION OF TERNARY MATERIALS FOR USE IN THE SEMICONDUCTOR INDUSTRY 审中-公开用于半导体工业中使用的三元材料的电流沉积的组合物公开(公告)号：US20110124191A1
公开(公告)日：2011-05-26
申请号：US12916887
申请日：2010-11-01
Applicant: Alexandra WIRTH
Inventor： Alexandra WIRTH
IPC: H01L21/768 , H01L29/12
CPC classification number: C23C18/50 , H01L21/288 , H01L21/76843 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.
Abstract translation: 本发明涉及在半导体技术中通过无电解方法沉积的NiMR型（其中M = Mo，W，Re或Cr，R = B或P）的三元含镍金属合金的使用。 特别地，本发明涉及这些沉积的三元含镍金属合金作为阻挡材料或用作防止半导体部件中的铜的扩散和电迁移的选择性封装材料的用途。
-
4.发明授权公开(公告)号：US07850770B2
公开(公告)日：2010-12-14
申请号：US10555326
申请日：2004-04-22
Applicant: Alexandra Wirth
Inventor： Alexandra Wirth
IPC: C23C18/36
CPC classification number: C23C18/50 , H01L21/288 , H01L21/76843 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
Abstract: The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.
Abstract translation: 本发明涉及在半导体技术中通过无电解方法沉积的NiMR型（其中M = Mo，W，Re或Cr，R = B或P）的三元含镍金属合金的使用。 特别地，本发明涉及这些沉积的三元含镍金属合金作为阻挡材料或用作防止半导体部件中的铜的扩散和电迁移的选择性封装材料的用途。
-
-
-
Search Results
4
records
(took 0.028 seconds)
