Invention Grant
US09064581B2 Method of programming non-volatile memory device and non-volatile memory device using the same
有权
使用该方法编程非易失性存储器件和非易失性存储器件
- Patent Title: Method of programming non-volatile memory device and non-volatile memory device using the same
- Patent Title (中): 使用该方法编程非易失性存储器件和非易失性存储器件
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Application No.: US13949833Application Date: 2013-07-24
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Publication No.: US09064581B2Publication Date: 2015-06-23
- Inventor: Moosung Kim , Ohsuk Kwon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2008-0103198 20081021
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C11/56 ; G11C16/04 ; G11C16/24 ; G11C7/10 ; G11C16/34
Abstract:
A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.
Public/Granted literature
- US20130308391A1 METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE AND NON-VOLATILE MEMORY DEVICE USING THE SAME Public/Granted day:2013-11-21
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