发明授权
- 专利标题： Method to convert waste silicon to high purity silicon
- 专利标题（中）： 将废硅转化为高纯硅的方法
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申请号： US12535612申请日： 2009-08-04
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公开(公告)号： US09067338B2公开(公告)日： 2015-06-30
- 发明人: Alleppey V. Hariharan , Jagannathan Ravi
- 申请人： Alleppey V. Hariharan , Jagannathan Ravi
- 申请人地址： US MA Bedford
- 专利权人： SEMLUX TECHNOLOGIES, INC.
- 当前专利权人： SEMLUX TECHNOLOGIES, INC.
- 当前专利权人地址： US MA Bedford
- 代理机构： Wilmer Cutler Pickering Hale and Dorr LLP
- 主分类号： C01B33/107
- IPC分类号： C01B33/107 ; C01B33/08 ; C01B33/021 ; B28D5/00 ; C01B33/037 ; C01B33/04
摘要：
A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.
公开/授权文献
- US20100061913A1 METHOD TO CONVERT WASTE SILICON TO HIGH PURITY SILICON 公开/授权日：2010-03-11
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