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公开(公告)号：US20150183055A1
公开(公告)日：2015-07-02
申请号：US11982748
申请日：2007-11-05
CPC分类号： B23K26/354 , B23K26/0006 , B23K2103/56 , C01B33/02 , C01B33/021 , C01B33/037 , C30B11/00 , C30B15/00 , C30B29/06
摘要： The present invention relates to a direct method to convert fine and ultra fine silicon powder from polysilicon manufacturing sources such as fluid bed and free space reactors into densified granular forms. This conversion process is effected by the use of lasers of selective wavelengths from solid state diode or optically-pumped YAG sources to locally heat, melt and densify a controlled quantity of silicon powder, and comprises the steps of distributing dry silicon powder on an inert substrate, subjecting the silicon charge to a focused laser beam to realize melted and densified granular forms, and discharging the product. When adapted to high purity silicon powder, the end use for the densified silicon granular forms is primarily as feedstock for silicon-based semiconductor and photovoltaic manufacturing industries. The process, suitably modified, is adaptable to form other silicon body shapes and components.
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公开(公告)号：US09206508B1
公开(公告)日：2015-12-08
申请号：US13275073
申请日：2011-10-17
CPC分类号： C23C16/24 , C01B33/035 , C23C16/481 , C23C16/483 , C23C16/56
摘要： This application describes a bulk and thin film chemical vapor deposition (CVD) process using lasers to heat a silicon substrate to the required deposition temperature. It is primarily applicable to production of polysilicon by the decomposition of halosilanes in a chemical reactor. It is also suitable for other materials that use a CVD process to deposit material on a heated silicon substrate.
摘要翻译： 本申请描述了使用激光将硅衬底加热到所需沉积温度的体薄膜化学气相沉积（CVD）工艺。 它主要适用于通过化学反应器中卤代硅烷的分解生产多晶硅。 它也适用于使用CVD工艺将材料沉积在加热的硅衬底上的其他材料。
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3.发明授权公开(公告)号：US09067792B1
公开(公告)日：2015-06-30
申请号：US11982748
申请日：2007-11-05
IPC分类号： C01B33/021 , C01B33/037
CPC分类号： B23K26/354 , B23K26/0006 , B23K2103/56 , C01B33/02 , C01B33/021 , C01B33/037 , C30B11/00 , C30B15/00 , C30B29/06
摘要： The present invention relates to a direct method to convert fine and ultra fine silicon powder from polysilicon manufacturing sources such as fluid bed and free space reactors into densified granular forms. This conversion process is effected by the use of lasers of selective wavelengths from solid state diode or optically-pumped YAG sources to locally heat, melt and densify a controlled quantity of silicon powder, and comprises the steps of distributing dry silicon powder on an inert substrate, subjecting the silicon charge to a focused laser beam to realize melted and densified granular forms, and discharging the product. When adapted to high purity silicon powder, the end use for the densified silicon granular forms is primarily as feedstock for silicon-based semiconductor and photovoltaic manufacturing industries. The process, suitably modified, is adaptable to form other silicon body shapes and components.
摘要翻译： 本发明涉及将精细和超细硅粉从诸如流化床和自由空间反应器的多晶硅制造源转化成致密颗粒形式的直接方法。 该转换过程通过使用来自固态二极管或光泵浦YAG源的选择波长的激光器来局部加热，熔化和致密化受控量的硅粉末，并且包括以下步骤：将干硅粉末分散在惰性衬底上 将硅电荷经受聚焦的激光束以实现熔融和致密的颗粒形式，并且将产品排出。 当适用于高纯度硅粉末时，最终用于致密硅颗粒形式主要用作硅基半导体和光伏制造行业的原料。 适合改性的方法适用于形成其它硅体形状和组分。
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公开(公告)号：US09067338B2
公开(公告)日：2015-06-30
申请号：US12535612
申请日：2009-08-04
IPC分类号： C01B33/107 , C01B33/08 , C01B33/021 , B28D5/00 , C01B33/037 , C01B33/04
CPC分类号： B28D5/007 , C01B33/021 , C01B33/037 , C01B33/04 , C01B33/107 , C01B33/10705 , C01B33/10736 , Y02P70/179
摘要： A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.
摘要翻译： 回收硅的方法包括提供从硅制造工艺回收的含硅固体，所述回收的含硅固体基本上不含半导体掺杂剂; 将回收的含硅固体转化为气态硅形式; 通过最少的蒸馏进行纯化; 收集气态硅形式作为含硅化合物的冷凝液体; 并利用含硅化合物进行硅沉积。
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公开(公告)号：US09061439B2
公开(公告)日：2015-06-23
申请号：US12535618
申请日：2009-08-04
IPC分类号： C01B33/02 , B28D5/00 , C01B33/021 , C01B33/037 , C01B33/04 , C01B33/107
CPC分类号： B28D5/007 , C01B33/021 , C01B33/037 , C01B33/04 , C01B33/107 , C01B33/10705 , C01B33/10736 , Y02P70/179
摘要： A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.
摘要翻译： 回收硅的方法包括提供从硅制造工艺回收的含硅固体，所述回收的含硅固体基本上不含半导体掺杂剂; 将回收的含硅固体转化为气态硅形式; 通过最少的蒸馏进行纯化; 收集气态硅形式作为含硅化合物的冷凝液体; 并利用含硅化合物进行硅沉积。
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公开(公告)号：US06479108B2
公开(公告)日：2002-11-12
申请号：US09944790
申请日：2001-08-31
IPC分类号： C23C410
CPC分类号： B29C33/58 , C23C4/11 , C23C4/134 , C30B11/002 , C30B15/10 , C30B35/002
摘要： A thermodynamically stable, protective coating layer is applied by thermal spray technique to the inner and outer surfaces of a quartz crucible used for mono or polycrystalline silicon crystallization processing, inhibiting fusion between the silicon melt and the vitreous silica of the crucible, contamination of the silicon melt by contaminants released from the crucible by devitrification, and any chemical reaction occurring between the crucible and any supporting graphite structure. A powdered form of a suitable protective coating material compatible with high temperature plasma spray techniques, such as magnesium zirconate, barium zirconate, or stabilized zirconium oxide, is fed into a high temperature and high speed plasma jet directed at the crucible. The powder particles are softened or melted in the jet and deposited on the surfaces of the quartz crucible, and allowed to cool and harden into a protective coating.
摘要翻译： 通过热喷涂技术将热力学稳定的保护涂层施加到用于单晶或多晶硅结晶处理的石英坩埚的内表面和外表面，抑制硅熔体与坩埚的玻璃状二氧化硅之间的熔合，硅的污染 由于通过失透而从坩埚中释放的污染物熔化，以及在坩埚和任何支撑石墨结构之间发生的任何化学反应。 与诸如锆酸镁，锆酸锆或稳定的氧化锆的高温等离子喷涂技术相容的合适的保护涂层材料的粉末形式被供给到指向坩埚的高温和高速等离子体射流中。 粉末颗粒在射流中软化或熔化并沉积在石英坩埚的表面上，并使其冷却并硬化成保护涂层。
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公开(公告)号：US06491971B2
公开(公告)日：2002-12-10
申请号：US09827540
申请日：2001-04-06
IPC分类号： B05D302
CPC分类号： C30B35/002 , B29C33/58 , C23C4/11 , C23C4/134 , C30B11/002 , C30B15/10
摘要： A method for preparing a release coating and applying it to crucibles used to contain molten material while it solidifies, by mixing a release coating power with a dry organic binder into a powder and binder dry mixture, mixing a defoamer with a liquid into a liquid and defoamer mixture, mixing the dry mixture with the liquid and defoamer mixture into a wet release coating, sieving to remove lumps and particles, checking the viscosity, wet-spraying onto a crucible, evaporating the liquid from the wet release coating so as to leave a dry release coating on the crucible, and separating the binder from the dry release coating by thermal decomposition.
摘要翻译： 一种制备脱模涂层并将其施加到用于容纳熔融材料的坩埚，同时固化的方法，通过将脱模涂布力与干燥有机粘合剂混合到粉末和粘合剂干混合物中，将消泡剂与液体混合成液体， 将干混合物与液体和消泡剂混合物混合到湿式脱模涂层中，筛分以除去团块和颗粒，检查粘度，湿法喷涂到坩埚上，将湿的脱模涂层中的液体蒸发出来， 将坩埚上的干燥脱模涂层，并通过热分解从粘合剂与干燥脱模涂层分离。
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公开(公告)号：US06620645B2
公开(公告)日：2003-09-16
申请号：US09993587
申请日：2001-11-16
IPC分类号： H01L2100
CPC分类号： H01L31/0504 , C23C4/00 , C23C4/134 , H01L31/022425 , Y02E10/50
摘要： A method for fabricating multi-cell solar devices using thermal spray deposition techniques to spray metal powder directly on solar cells and on the backing upon which solar cells are assembled, to form collection grid lines, bus bars, electrodes and interconnections between solar cells.
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9.发明授权High-pressure discharge lamp having UV radiation source for enhancing ignition 失效具有用于增强点火的UV辐射源的高压放电灯
公开(公告)号：US5990599A
公开(公告)日：1999-11-23
申请号：US993953
申请日：1997-12-18
申请人： Andrew D. Jackson , Alleppey V. Hariharan , Randy J. Robinson , Albert E. Kowal , John Alderman
发明人： Andrew D. Jackson , Alleppey V. Hariharan , Randy J. Robinson , Albert E. Kowal , John Alderman
CPC分类号： H01J61/827 , H01J61/34 , H01J61/54
摘要： HID lamp has a U-enhancer connected between first and second leads for an arc tube. The UV-enhancer has a quartz envelope containing an electrode connected to the first lead, and is surrounded by a metal ring which is spaced from the envelope by a sleeve of borosilicate glass. The ring is capacitively coupled to the envelope and is electrically connected to the second lead, which may also support the sleeve.
摘要翻译： HID灯具有连接在用于电弧管的第一和第二引线之间的U增强器。 紫外增强剂具有包含连接到第一引线的电极的石英外壳，并且由与硼硅酸盐玻璃的套筒与外壳隔开的金属环围绕。 环电容耦合到外壳并且电连接到第二引线，其也可以支撑套管。
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公开(公告)号：US06841728B2
公开(公告)日：2005-01-11
申请号：US10125329
申请日：2002-04-18
申请人： Bernard D. Jones , Eric de Rivera , Alleppey V. Hariharan , Steven T. Slavsky , Thomas S. McGee , David W. Lackey , Thomas N. Kirchner
发明人： Bernard D. Jones , Eric de Rivera , Alleppey V. Hariharan , Steven T. Slavsky , Thomas S. McGee , David W. Lackey , Thomas N. Kirchner
CPC分类号： H01L31/188 , Y02E10/50 , Y10S136/293 , Y10T29/5136 , Y10T29/5137 , Y10T29/5138 , Y10T29/53048 , Y10T29/53061 , Y10T29/5313 , Y10T29/53135
摘要： A machine for the automated assembly of wafers such as solar cells into strings, comprising a control system, a cell loader with wafer inspection station, a cell tab loader, a string assembly station, and a platen with adjacent pairs of individual cell, opposing edge grippers having multiple sets of vertically operable pincer action fingers for holding cells in string alignment during soldering. The string assembly station has a cooperating cell support and tab tail support mechanism providing for a tab tail hand off from one to the other with a platen indexing movements of cell pitch distance. The platen moves from the string assembly station through a soldering station consisting of a preheat, soldering, and cooling zones spaced a cell pitch distance apart. A string unloader moves completed strings through a string inspection station placing strings in a good or bad string holding area.
摘要翻译： 一种用于将诸如太阳能电池的晶片自动组装成串的机器，包括控制系统，具有晶片检查站的电池装载器，电池片装载器，串组件站和具有相邻单独电池单元的相对边缘的压板 夹具具有多组可垂直操作的夹紧动作指状物，用于在焊接期间将细胞保持为串联对齐。 弦组合站具有配合的单元支撑和翼片尾部支撑机构，其通过压板分度移动单元间距距离从一个到另一个提供翼片尾部手。 压板从弦组装工位通过由预热，焊接和冷却区组成的焊接站移动，隔离间隔距离。 字符串卸载程序通过字符串检查站移动完成的字符串，将字符串放置在好或坏的字符串保存区域中。
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