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1.发明授权公开(公告)号：US09067792B1
公开(公告)日：2015-06-30
申请号：US11982748
申请日：2007-11-05
IPC分类号： C01B33/021 , C01B33/037
CPC分类号： B23K26/354 , B23K26/0006 , B23K2103/56 , C01B33/02 , C01B33/021 , C01B33/037 , C30B11/00 , C30B15/00 , C30B29/06
摘要： The present invention relates to a direct method to convert fine and ultra fine silicon powder from polysilicon manufacturing sources such as fluid bed and free space reactors into densified granular forms. This conversion process is effected by the use of lasers of selective wavelengths from solid state diode or optically-pumped YAG sources to locally heat, melt and densify a controlled quantity of silicon powder, and comprises the steps of distributing dry silicon powder on an inert substrate, subjecting the silicon charge to a focused laser beam to realize melted and densified granular forms, and discharging the product. When adapted to high purity silicon powder, the end use for the densified silicon granular forms is primarily as feedstock for silicon-based semiconductor and photovoltaic manufacturing industries. The process, suitably modified, is adaptable to form other silicon body shapes and components.
摘要翻译： 本发明涉及将精细和超细硅粉从诸如流化床和自由空间反应器的多晶硅制造源转化成致密颗粒形式的直接方法。 该转换过程通过使用来自固态二极管或光泵浦YAG源的选择波长的激光器来局部加热，熔化和致密化受控量的硅粉末，并且包括以下步骤：将干硅粉末分散在惰性衬底上 将硅电荷经受聚焦的激光束以实现熔融和致密的颗粒形式，并且将产品排出。 当适用于高纯度硅粉末时，最终用于致密硅颗粒形式主要用作硅基半导体和光伏制造行业的原料。 适合改性的方法适用于形成其它硅体形状和组分。
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公开(公告)号：US20100061913A1
公开(公告)日：2010-03-11
申请号：US12535612
申请日：2009-08-04
IPC分类号： C01B33/107 , C01B33/08 , C01B33/021
CPC分类号： B28D5/007 , C01B33/021 , C01B33/037 , C01B33/04 , C01B33/107 , C01B33/10705 , C01B33/10736 , Y02P70/179
摘要： A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.
摘要翻译： 回收硅的方法包括提供从硅制造工艺回收的含硅固体，所述回收的含硅固体基本上不含半导体掺杂剂; 将回收的含硅固体转化为气态硅形式; 通过最少的蒸馏进行纯化; 收集气态硅形式作为含硅化合物的冷凝液体; 并利用含硅化合物进行硅沉积。
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公开(公告)号：US06479108B2
公开(公告)日：2002-11-12
申请号：US09944790
申请日：2001-08-31
IPC分类号： C23C410
CPC分类号： B29C33/58 , C23C4/11 , C23C4/134 , C30B11/002 , C30B15/10 , C30B35/002
摘要： A thermodynamically stable, protective coating layer is applied by thermal spray technique to the inner and outer surfaces of a quartz crucible used for mono or polycrystalline silicon crystallization processing, inhibiting fusion between the silicon melt and the vitreous silica of the crucible, contamination of the silicon melt by contaminants released from the crucible by devitrification, and any chemical reaction occurring between the crucible and any supporting graphite structure. A powdered form of a suitable protective coating material compatible with high temperature plasma spray techniques, such as magnesium zirconate, barium zirconate, or stabilized zirconium oxide, is fed into a high temperature and high speed plasma jet directed at the crucible. The powder particles are softened or melted in the jet and deposited on the surfaces of the quartz crucible, and allowed to cool and harden into a protective coating.
摘要翻译： 通过热喷涂技术将热力学稳定的保护涂层施加到用于单晶或多晶硅结晶处理的石英坩埚的内表面和外表面，抑制硅熔体与坩埚的玻璃状二氧化硅之间的熔合，硅的污染 由于通过失透而从坩埚中释放的污染物熔化，以及在坩埚和任何支撑石墨结构之间发生的任何化学反应。 与诸如锆酸镁，锆酸锆或稳定的氧化锆的高温等离子喷涂技术相容的合适的保护涂层材料的粉末形式被供给到指向坩埚的高温和高速等离子体射流中。 粉末颗粒在射流中软化或熔化并沉积在石英坩埚的表面上，并使其冷却并硬化成保护涂层。
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公开(公告)号：US20160348271A1
公开(公告)日：2016-12-01
申请号：US15168971
申请日：2016-05-31
CPC分类号： C30B13/20 , C30B11/00 , C30B13/24 , C30B29/06 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention is directed towards an integrated and economic process for making mono-crystalline silicon for photovoltaic applications. It utilizes high purity, low dopant metallurgically produced silicon, in particular, silicon recovered from silicon manufacturing processes, such as kerf silicon processed through a metallurgical furnace process. Liquid silicon from the metallurgical process is cast into specific forms and utilized for float zone purification and crystallization to make mono-crystalline silicon ingots and wafers for photovoltaic cell fabrication.
摘要翻译： 本发明涉及用于制造用于光伏应用的单晶硅的综合和经济的方法。 它利用高纯度，低掺杂剂冶金制造的硅，特别是从硅制造工艺回收的硅，例如通过冶金炉工艺加工的切屑硅。 来自冶金工艺的液态硅被浇铸成特定形式，用于浮区净化和结晶以制造用于光伏电池制造的单晶硅锭和晶片。
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公开(公告)号：US09206508B1
公开(公告)日：2015-12-08
申请号：US13275073
申请日：2011-10-17
CPC分类号： C23C16/24 , C01B33/035 , C23C16/481 , C23C16/483 , C23C16/56
摘要： This application describes a bulk and thin film chemical vapor deposition (CVD) process using lasers to heat a silicon substrate to the required deposition temperature. It is primarily applicable to production of polysilicon by the decomposition of halosilanes in a chemical reactor. It is also suitable for other materials that use a CVD process to deposit material on a heated silicon substrate.
摘要翻译： 本申请描述了使用激光将硅衬底加热到所需沉积温度的体薄膜化学气相沉积（CVD）工艺。 它主要适用于通过化学反应器中卤代硅烷的分解生产多晶硅。 它也适用于使用CVD工艺将材料沉积在加热的硅衬底上的其他材料。
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公开(公告)号：US06491971B2
公开(公告)日：2002-12-10
申请号：US09827540
申请日：2001-04-06
IPC分类号： B05D302
CPC分类号： C30B35/002 , B29C33/58 , C23C4/11 , C23C4/134 , C30B11/002 , C30B15/10
摘要： A method for preparing a release coating and applying it to crucibles used to contain molten material while it solidifies, by mixing a release coating power with a dry organic binder into a powder and binder dry mixture, mixing a defoamer with a liquid into a liquid and defoamer mixture, mixing the dry mixture with the liquid and defoamer mixture into a wet release coating, sieving to remove lumps and particles, checking the viscosity, wet-spraying onto a crucible, evaporating the liquid from the wet release coating so as to leave a dry release coating on the crucible, and separating the binder from the dry release coating by thermal decomposition.
摘要翻译： 一种制备脱模涂层并将其施加到用于容纳熔融材料的坩埚，同时固化的方法，通过将脱模涂布力与干燥有机粘合剂混合到粉末和粘合剂干混合物中，将消泡剂与液体混合成液体， 将干混合物与液体和消泡剂混合物混合到湿式脱模涂层中，筛分以除去团块和颗粒，检查粘度，湿法喷涂到坩埚上，将湿的脱模涂层中的液体蒸发出来， 将坩埚上的干燥脱模涂层，并通过热分解从粘合剂与干燥脱模涂层分离。
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公开(公告)号：US20150183055A1
公开(公告)日：2015-07-02
申请号：US11982748
申请日：2007-11-05
CPC分类号： B23K26/354 , B23K26/0006 , B23K2103/56 , C01B33/02 , C01B33/021 , C01B33/037 , C30B11/00 , C30B15/00 , C30B29/06
摘要： The present invention relates to a direct method to convert fine and ultra fine silicon powder from polysilicon manufacturing sources such as fluid bed and free space reactors into densified granular forms. This conversion process is effected by the use of lasers of selective wavelengths from solid state diode or optically-pumped YAG sources to locally heat, melt and densify a controlled quantity of silicon powder, and comprises the steps of distributing dry silicon powder on an inert substrate, subjecting the silicon charge to a focused laser beam to realize melted and densified granular forms, and discharging the product. When adapted to high purity silicon powder, the end use for the densified silicon granular forms is primarily as feedstock for silicon-based semiconductor and photovoltaic manufacturing industries. The process, suitably modified, is adaptable to form other silicon body shapes and components.
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8.发明申请METHOD TO CONVERT SILICON POWDER TO HIGH PURITY POLYSILICON THROUGH INTERMEDIATE SiF4 审中-公开通过中间SiF4将硅粉转化为高纯度聚硅氧烷的方法公开(公告)号：US20100061911A1
公开(公告)日：2010-03-11
申请号：US12535613
申请日：2009-08-04
CPC分类号： B28D5/007 , C01B33/021 , C01B33/037 , C01B33/04 , C01B33/107 , C01B33/10705 , C01B33/10736 , Y02P70/179
摘要： A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.
摘要翻译： 回收硅的方法包括提供从硅制造工艺回收的含硅固体，所述回收的含硅固体基本上不含半导体掺杂剂; 将回收的含硅固体转化为气态硅形式; 通过最少的蒸馏进行纯化; 收集气态硅形式作为含硅化合物的冷凝液体; 并利用含硅化合物进行硅沉积。
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公开(公告)号：US20100032630A1
公开(公告)日：2010-02-11
申请号：US12535618
申请日：2009-08-04
CPC分类号： B28D5/007 , C01B33/021 , C01B33/037 , C01B33/04 , C01B33/107 , C01B33/10705 , C01B33/10736 , Y02P70/179
摘要： A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.
摘要翻译： 回收硅的方法包括提供从硅制造工艺回收的含硅固体，所述回收的含硅固体基本上不含半导体掺杂剂; 将回收的含硅固体转化为气态硅形式; 通过最少的蒸馏进行纯化; 收集气态硅形式作为含硅化合物的冷凝液体; 并利用含硅化合物进行硅沉积。
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公开(公告)号：US06620645B2
公开(公告)日：2003-09-16
申请号：US09993587
申请日：2001-11-16
IPC分类号： H01L2100
CPC分类号： H01L31/0504 , C23C4/00 , C23C4/134 , H01L31/022425 , Y02E10/50
摘要： A method for fabricating multi-cell solar devices using thermal spray deposition techniques to spray metal powder directly on solar cells and on the backing upon which solar cells are assembled, to form collection grid lines, bus bars, electrodes and interconnections between solar cells.
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