Invention Grant
- Patent Title: 3-axis magnetic field sensor, method for fabricating magnetic field sensing structure and magnetic field sensing circuit
- Patent Title (中): 3轴磁场传感器,磁场检测结构和磁场检测电路的制造方法
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Application No.: US13907960Application Date: 2013-06-02
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Publication No.: US09069033B2Publication Date: 2015-06-30
- Inventor: Young-Shying Chen , Keng-Ming Kuo , Ding-Yeong Wang , Cheng-Wei Chien
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW102110704A 20130326
- Main IPC: G01B7/14
- IPC: G01B7/14 ; G01B7/30 ; G01R33/06 ; H01L43/08 ; G01R33/09

Abstract:
A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.
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