公开(公告)号：US20140292312A1

公开(公告)日：2014-10-02

申请号：US13907960

申请日：2013-06-02

申请人： Industrial Technology Research Institute

发明人： Young-Shying Chen ,  Keng-Ming Kuo ,  Ding-Yeong Wang ,  Cheng-Wei Chien

IPC分类号： G01D5/16

CPC分类号： G01R33/098

摘要： A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.

摘要翻译： 一种基板上的3轴磁场传感器，包括具有用于感测X轴磁场的第一容易轴的第一隧道磁阻电阻器（TMR），具有用于感测Y轴的第二容易轴的第二TMR 轴磁场，用于感测Z轴磁场的平面外的磁传感器和参考单元。 第一容易轴和第二容易轴是正交的，并且包括具有平分方向的45±5度的角度。 平面外的磁传感器包括具有第一倾斜和第二倾斜的凹槽或凸起结构; 具有第三容易轴的第一斜面上的第三个TMR; 具有第四容易轴的第二斜面上的第四TMR; 以及与二等分方向正交并平行于第三容易轴和第四容易轴的中心轴。 参考单元具有平行于二等分方向的第五TMR和第五容易轴。

公开(公告)号：US20160343936A1

公开(公告)日：2016-11-24

申请号：US15229811

申请日：2016-08-05

申请人： International Business Machines Corporation ,  Industrial Technology Research Institute

发明人： Guohan Hu ,  Cheng-Wei Chien

IPC分类号： H01L43/08 ,  G11C19/08 ,  G11C11/16 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02

CPC分类号： H01L43/08 ,  G11B5/33 ,  G11C11/161 ,  G11C19/0808 ,  G11C19/0841 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.

公开(公告)号：US09431600B2

公开(公告)日：2016-08-30

申请号：US14506798

申请日：2014-10-06

申请人： International Business Machines Corporation ,  Industrial Technology Research Institute

发明人： Guohan Hu ,  Cheng-Wei Chien

IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  G11B5/33

CPC分类号： H01L43/08 ,  G11B5/33 ,  G11C11/161 ,  G11C19/0808 ,  G11C19/0841 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.

摘要翻译： 一种器件包括种子层，设置在种子层上的磁道层，设置在磁道层上的合金层，设置在合金层上的隧道势垒层，设置在隧道势垒层上的钉扎层，合成反铁磁性 设置在钉扎层上的层间隔层，设置在合成反铁磁间隔层上的钉扎层和设置在钉扎层上的反铁磁层，另一装置包括种子层，设置在种子层上的反铁磁层，被钉扎层设置在 反铁磁层，设置在被钉扎层上的合成反铁磁层间隔物，设置在合成反铁磁层间隔物上的钉扎层，设置在钉扎层上的隧道势垒层，设置在隧道势垒层上的合金层和磁道层 放置在合金层上。

公开(公告)号：US20160099404A1

公开(公告)日：2016-04-07

申请号：US14506798

申请日：2014-10-06

申请人： International Business Machines Corporation ,  Industrial Technology Research Institute

发明人： Guohan Hu ,  Cheng-Wei Chien

IPC分类号： H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC分类号： H01L43/08 ,  G11B5/33 ,  G11C11/161 ,  G11C19/0808 ,  G11C19/0841 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.

摘要翻译： 一种器件包括种子层，设置在种子层上的磁道层，设置在磁道层上的合金层，设置在合金层上的隧道势垒层，设置在隧道势垒层上的钉扎层，合成反铁磁性 设置在钉扎层上的层间隔层，设置在合成反铁磁间隔层上的钉扎层和设置在钉扎层上的反铁磁层，另一装置包括种子层，设置在种子层上的反铁磁层，被钉扎层设置在 反铁磁层，设置在被钉扎层上的合成反铁磁层间隔物，设置在合成反铁磁层间隔物上的钉扎层，设置在钉扎层上的隧道势垒层，设置在隧道势垒层上的合金层和磁道层 放置在合金层上。

公开(公告)号：US09069033B2

公开(公告)日：2015-06-30

申请号：US13907960

申请日：2013-06-02

申请人： Industrial Technology Research Institute

发明人： Young-Shying Chen ,  Keng-Ming Kuo ,  Ding-Yeong Wang ,  Cheng-Wei Chien

IPC分类号： G01B7/14 ,  G01B7/30 ,  G01R33/06 ,  H01L43/08 ,  G01R33/09

CPC分类号： G01R33/098

摘要： A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.

摘要翻译： 一种基板上的3轴磁场传感器，包括具有用于感测X轴磁场的第一容易轴的第一隧道磁阻电阻器（TMR），具有用于感测Y轴的第二容易轴的第二TMR 轴磁场，用于感测Z轴磁场的平面外的磁传感器和参考单元。 第一容易轴和第二容易轴是正交的，并且包括具有平分方向的45±5度的角度。 平面外的磁传感器包括具有第一倾斜和第二倾斜的凹槽或凸起结构; 具有第三容易轴的第一斜面上的第三个TMR; 具有第四容易轴的第二斜面上的第四TMR; 以及与二等分方向正交并平行于第三容易轴和第四容易轴的中心轴。 参考单元具有平行于二等分方向的第五TMR和第五容易轴。

公开(公告)号：US10580971B2

公开(公告)日：2020-03-03

申请号：US15892979

申请日：2018-02-09

申请人： International Business Machines Corporation ,  Industrial Technology Research Institute

发明人： Guohan Hu ,  Cheng-Wei Chien

IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  G11C19/08 ,  H01L43/12 ,  G11B5/33

摘要： A method includes depositing a magnetic track layer on a seed layer, depositing an alloy layer on the magnetic track layer, depositing a tunnel barrier layer on the alloy layer, depositing a pinning layer on the tunnel barrier layer, depositing a synthetic antiferromagnetic layer spacer on the pinning layer, depositing a pinned layer on the synthetic antiferromagnetic spacer layer and depositing an antiferromagnetic layer on the pinned layer, and another method includes depositing an antiferromagnetic layer on a seed layer, depositing a pinned layer on the antiferromagnetic layer, depositing a synthetic antiferromagnetic layer spacer on the pinned layer, depositing a pinning layer on the synthetic antiferromagnetic layer spacer, depositing a tunnel barrier layer on the pinning layer, depositing an alloy layer on the tunnel barrier layer and depositing a magnetic track layer on alloy layer.

公开(公告)号：US20180166626A1

公开(公告)日：2018-06-14

申请号：US15892979

申请日：2018-02-09

申请人： International Business Machines Corporation ,  Industrial Technology Research Institute

发明人： Guohan Hu ,  Cheng-Wei Chien

IPC分类号： H01L43/08 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  G11C19/08 ,  G11C11/16 ,  G11B5/33

CPC分类号： H01L43/08 ,  G11B5/33 ,  G11C11/161 ,  G11C19/0808 ,  G11C19/0841 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A method includes depositing a magnetic track layer on a seed layer, depositing an alloy layer on the magnetic track layer, depositing a tunnel barrier layer on the alloy layer, depositing a pinning layer on the tunnel barrier layer, depositing a synthetic antiferromagnetic layer spacer on the pinning layer, depositing a pinned layer on the synthetic antiferromagnetic spacer layer and depositing an antiferromagnetic layer on the pinned layer, and another method includes depositing an antiferromagnetic layer on a seed layer, depositing a pinned layer on the antiferromagnetic layer, depositing a synthetic antiferromagnetic layer spacer on the pinned layer, depositing a pinning layer on the synthetic antiferromagnetic layer spacer, depositing a tunnel barrier layer on the pinning layer, depositing an alloy layer on the tunnel barrier layer and depositing a magnetic track layer on alloy layer.

公开(公告)号：US09941465B2

公开(公告)日：2018-04-10

申请号：US15229811

申请日：2016-08-05

申请人： International Business Machines Corporation ,  Industrial Technology Research Institute

发明人： Guohan Hu ,  Cheng-Wei Chien

IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  G11C19/08 ,  H01L43/12 ,  G11B5/33

CPC分类号： H01L43/08 ,  G11B5/33 ,  G11C11/161 ,  G11C19/0808 ,  G11C19/0841 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.

公开(公告)号：US20140138782A1

公开(公告)日：2014-05-22

申请号：US13851097

申请日：2013-03-26

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Cheng-Wei Chien

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： G01R33/0005 ,  G01R33/0052

摘要： A magnetic sensing apparatus and a manufacturing method thereof are provided. The magnetic sensing apparatus includes a substrate including a first surface having at least one first inclined plane, a first dielectric layer having at least one second inclined plane and at least one magnetic sensing device. The first dielectric layer is disposed on the first surface of the substrate. The surface roughness of the first dielectric layer is less than the surface roughness of the at least one first inclined plane. The inclination of the at least one second inclined plane is less than the inclination of the at least one first inclined plane. The magnetic sensing device is disposed on the at least one second inclined plane.

摘要翻译： 提供一种磁敏装置及其制造方法。 该磁感测装置包括一基板，该基板包括具有至少一个第一倾斜平面的第一表面，具有至少一个第二倾斜平面的第一介电层和至少一个磁感测装置。 第一介电层设置在基板的第一表面上。 第一电介质层的表面粗糙度小于至少一个第一倾斜面的表面粗糙度。 所述至少一个第二倾斜平面的倾斜度小于所述至少一个第一倾斜平面的倾斜度。 磁感测装置设置在至少一个第二倾斜平面上。