Invention Grant
- Patent Title: Flash memory device using adaptive program verification scheme and related method of operation
- Patent Title (中): 闪存器件采用自适应程序验证方案及相关操作方法
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Application No.: US13841503Application Date: 2013-03-15
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Publication No.: US09076534B2Publication Date: 2015-07-07
- Inventor: Sang Yong Yoon , Ki Tae Park , Moo Sung Kim , Bo Geun Kim , Hyun jun Yoon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0012894 20100211
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C11/56 ; G11C16/34
Abstract:
A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.
Public/Granted literature
- US20130208541A1 FLASH MEMORY DEVICE USING ADAPTIVE PROGRAM VERIFICATION SCHEME AND RELATED METHOD OF OPERATION Public/Granted day:2013-08-15
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