公开(公告)号：US09355733B2

公开(公告)日：2016-05-31

申请号：US14062088

申请日：2013-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Young Kim ,  Ki Tae Park ,  Bo Geun Kim

IPC: G11C16/26 ,  G11C11/56

CPC classification number: G11C16/26 ,  G11C11/5628

Abstract: A memory system performs a first sensing operation to sense whether multi-level cells assume an on-cell state or an off-cell state in response to a first read voltage applied to a selected word line. It then supplies a pre-charge voltage to bit lines corresponding to multi-level cells that have been sensed as assuming the off-cell state in response to the first read voltage, and it performs a second sensing operation with the supplied pre-charge voltage to sense whether each of the multi-level cells that have been sensed as assuming the off-cell state assumes an on-cell state or an off-cell state in response to a second read voltage applied to the selected word line.

Abstract translation: 存储器系统执行第一感测操作以响应于施加到所选字线的第一读取电压来感测多电平单元是否呈现接通电池状态还是关闭电池状态。 然后，将预充电电压提供给对应于响应于第一读取电压而被感测为假电池状态的多电平电池的位线，并且其执行具有所提供的预充电电压的第二感测操作 检测出响应于施加到所选择的字线的第二读取电压，已经被感测为假设关闭单元状态的每个多电平单元是否处于接通电池状态或关闭单元状态。

公开(公告)号：US09076534B2

公开(公告)日：2015-07-07

申请号：US13841503

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Yong Yoon ,  Ki Tae Park ,  Moo Sung Kim ,  Bo Geun Kim ,  Hyun jun Yoon

IPC: G11C16/10 ,  G11C11/56 ,  G11C16/34

CPC classification number: G11C16/3459 ,  G11C11/56 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/3454

Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

Abstract translation: 一种对闪速存储器件进行编程的方法包括编程所选择的存储器单元，执行验证操作以确定所选择的存储器单元是否已经达到目标程序状态，以及基于与检测相关联的编程特性来确定验证操作的起始点 在编程初始程序状态期间的通过位。

公开(公告)号：US09406394B2

公开(公告)日：2016-08-02

申请号：US14726927

申请日：2015-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Yong Yoon ,  Ki Tae Park ,  Moo Sung Kim ,  Bo Geun Kim ,  Hyun Jun Yoon

IPC: G11C16/34 ,  G11C16/10 ,  G11C11/56

CPC classification number: G11C16/3459 ,  G11C11/56 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/3454

Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

公开(公告)号：US08995189B2

公开(公告)日：2015-03-31

申请号：US13969929

申请日：2013-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Yong Yoon ,  Dong Hyuk Chae ,  Bo Geun Kim

IPC: G11C11/34 ,  G11C16/10 ,  G11C11/56

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C11/5642 ,  G11C2211/5648

Abstract: A memory system comprises a multi-bit memory device and a memory controller that controls the multi-bit memory device. The memory system determines whether a requested program operation is a random program operation or a sequential program operation. Where the requested program operation is a random program operation, the memory controller controls the multi-bit memory device to perform operations according to a fine program close policy or a fine program open policy.

Abstract translation: 存储器系统包括多位存储器件和控制多位存储器件的存储器控​​制器。 存储器系统确定所请求的程序操作是随机程序操作还是顺序程序操作。 在所请求的程序操作是随机程序操作的情况下，存储器控制器控制多位存储器件根据精细程序关闭策略或精细程序打开策略执行操作。

公开(公告)号：US09384840B2

公开(公告)日：2016-07-05

申请号：US14187362

申请日：2014-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoon Hee Choi ,  Ki Tae Park ,  Bo Geun Kim

IPC: G11C7/00 ,  G11C16/10 ,  G11C7/04 ,  G11C16/30 ,  G11C16/26

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C16/26 ,  G11C16/30

Abstract: Disclosed is a method generating a compensated operating voltage, such as a read voltage, in a non-volatile memory device, and a related non-volatile memory device. The operating voltage is compensated in response to one or more memory cell conditions such as temperature variation, programmed data state or physical location of a selected memory cell, page information for selected memory cell, or the location of a selected word line.

Abstract translation: 公开了一种在非易失性存储器件中生成诸如读取电压的补偿工作电压的方法以及相关的非易失性存储器件。 响应于一个或多个存储器单元条件（诸如所选存储器单元的温度变化，编程数据状态或物理位置，所选择的存储器单元的页面信息或所选择的字线的位置）来补偿工作电压。