Mechanism for forming metal gate structure

Invention Grant

US09076766B2 Mechanism for forming metal gate structure 有权

Title translation: 形成金属栅极结构的机理

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Patent Title: Mechanism for forming metal gate structure
Patent Title (中): 形成金属栅极结构的机理
Application No.: US13917145

Application Date: 2013-06-13
Publication No.: US09076766B2

Publication Date: 2015-07-07
Inventor: Chi-Jen Liu , Li-Chieh Wu , Shich-Chang Suen , Liang-Guang Chen
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Birch, Stewart, Kolasch & Birch, LLP
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L21/8238 ; H01L29/423 ; H01L29/49

Mechanism for forming metal gate structure

Abstract:

Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate with a metal gate stack formed on the semiconductor substrate, and the metal gate stack includes a metal gate electrode. The semiconductor device also includes a metal oxide layer formed over the metal gate stack and in direct contact with the metal gate electrode, and a thickness of the metal oxide layer is in a range from about 15 Å to about 40 Å. The metal oxide layer has a first portion made of an oxidized material of the metal gate electrode and has a second portion made of a material different from that of the first portion.

Abstract(Chinese):

提供了用于形成半导体器件的机构的实施例。半导体器件包括在半导体衬底上形成有金属栅堆叠的半导体衬底，并且金属栅叠层包括金属栅电极。半导体器件还包括形成在金属栅叠层上并与金属栅电极直接接触的金属氧化物层，并且金属氧化物层的厚度在大约至大约的范围内。金属氧化物层具有由金属栅电极的氧化材料制成的第一部分，并且具有由不同于第一部分的材料制成的第二部分。

Public/Granted literature

US20140367801A1 MECHANISM FOR FORMING METAL GATE STRUCTURE Public/Granted day:2014-12-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺