公开(公告)号：US11637021B2

公开(公告)日：2023-04-25

申请号：US17323951

申请日：2021-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Jen Liu ,  Chi-Hsiang Shen ,  Te-Ming Kung ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Yang-Chun Cheng ,  William Weilun Hong ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: H01L21/321 ,  H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  C09G1/02

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US11037799B2

公开(公告)日：2021-06-15

申请号：US16400620

申请日：2019-05-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  Te-Ming Kung ,  William Weilun Hong ,  Chi-Hsiang Shen ,  Chia-Wei Ho ,  Chun-Wei Hsu ,  Yang-Chun Cheng

IPC: H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/321 ,  H01L21/768 ,  C09G1/02

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US20210163859A1

公开(公告)日：2021-06-03

申请号：US17172939

申请日：2021-02-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pinlei Edmund Chu ,  Chun-Wei Hsu ,  Ling-Fu Nieh ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Yi-Sheng Lin

IPC: C11D11/00 ,  C11D7/26 ,  H01L21/02

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

公开(公告)号：US20200098591A1

公开(公告)日：2020-03-26

申请号：US16400620

申请日：2019-05-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  Te-Ming Kung ,  William Weilun Hong ,  Chi-Hsiang Shen ,  Chia-Wei Ho ,  Chun-Wei Hsu ,  Yang-Chun Cheng

IPC: H01L21/321 ,  H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US09768064B1

公开(公告)日：2017-09-19

申请号：US15210037

申请日：2016-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Chi-Jen Liu ,  Cheng-Chun Chang ,  Yi-Sheng Lin ,  Liang-Guang Chen

IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/311 ,  H01L21/8234

CPC classification number: H01L21/76883 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53266

Abstract: Formation methods of a semiconductor device structure are provided. The method includes providing a substrate having a low topography region and a high low topography region. The method also includes forming a first dielectric layer over the substrate. The method further includes forming a second dielectric layer over the stop layer. In addition, the method includes forming an opening in the first dielectric layer, the stop layer and the second dielectric layer. The method also includes forming a conductive material layer over the second dielectric layer. The conductive material layer fills the opening. The method further includes performing a polishing process over the conductive material layer until a top surface of the stop layer is exposed.

公开(公告)号：US09630295B2

公开(公告)日：2017-04-25

申请号：US13944353

申请日：2013-07-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： He-Hui Peng ,  Fu-Ming Huang ,  Shich-Chang Suen ,  Han-Hsin Kuo ,  Chi-Ming Tsai ,  Liang-Guang Chen

IPC: B24B53/017 ,  H01L21/304 ,  B08B3/02

CPC classification number: B24B53/017 ,  B08B3/02 ,  H01L21/304

Abstract: Embodiments of mechanisms for performing a chemical mechanical polishing (CMP) process are provided. A method for performing a CMP process includes polishing a wafer by using a polishing pad. The method also includes applying a cleaning liquid jet on the polishing pad to condition the polishing pad. A CMP system is also provided.

公开(公告)号：US12172263B2

公开(公告)日：2024-12-24

申请号：US18312753

申请日：2023-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Michael Yen ,  Kao-Feng Liao ,  Hsin-Ying Ho ,  Chun-Wen Hsiao ,  Sheng-Chao Chuang ,  Ting-Hsun Chang ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Peng-Chung Jangjian ,  Ji James Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/26 ,  B24B37/005 ,  B24B37/04 ,  B24B37/24

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

公开(公告)号：US20230352295A1

公开(公告)日：2023-11-02

申请号：US18349476

申请日：2023-07-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: H01L21/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  B08B3/04 ,  H01L21/306 ,  H01L21/687

CPC classification number: H01L21/02043 ,  H01L21/67046 ,  B08B1/002 ,  B08B1/04 ,  B08B3/04 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67092 ,  H01L21/687 ,  H01L21/02065 ,  H01L21/02074

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

公开(公告)号：US11773353B2

公开(公告)日：2023-10-03

申请号：US17172939

申请日：2021-02-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pinlei Edmund Chu ,  Chun-Wei Hsu ,  Ling-Fu Nieh ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Yi-Sheng Lin

IPC: H01L21/02 ,  H01L21/302 ,  B08B1/00 ,  C11D11/00 ,  C11D7/26 ,  H01L21/321

CPC classification number: C11D11/0047 ,  C11D7/261 ,  C11D7/268 ,  H01L21/02074 ,  H01L21/3212

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

公开(公告)号：US11728157B2

公开(公告)日：2023-08-15

申请号：US17734314

申请日：2022-05-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: H01L21/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  B08B3/04 ,  H01L21/306 ,  H01L21/687

CPC classification number: H01L21/02043 ,  B08B1/002 ,  B08B1/04 ,  B08B3/04 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67092 ,  H01L21/687 ,  H01L21/02065 ,  H01L21/02074

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.