公开(公告)号：US11637021B2

公开(公告)日：2023-04-25

申请号：US17323951

申请日：2021-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Jen Liu ,  Chi-Hsiang Shen ,  Te-Ming Kung ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Yang-Chun Cheng ,  William Weilun Hong ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: H01L21/321 ,  H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  C09G1/02

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US11037799B2

公开(公告)日：2021-06-15

申请号：US16400620

申请日：2019-05-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  Te-Ming Kung ,  William Weilun Hong ,  Chi-Hsiang Shen ,  Chia-Wei Ho ,  Chun-Wei Hsu ,  Yang-Chun Cheng

IPC: H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/321 ,  H01L21/768 ,  C09G1/02

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US20210163859A1

公开(公告)日：2021-06-03

申请号：US17172939

申请日：2021-02-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pinlei Edmund Chu ,  Chun-Wei Hsu ,  Ling-Fu Nieh ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Yi-Sheng Lin

IPC: C11D11/00 ,  C11D7/26 ,  H01L21/02

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

公开(公告)号：US20200098591A1

公开(公告)日：2020-03-26

申请号：US16400620

申请日：2019-05-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  Te-Ming Kung ,  William Weilun Hong ,  Chi-Hsiang Shen ,  Chia-Wei Ho ,  Chun-Wei Hsu ,  Yang-Chun Cheng

IPC: H01L21/321 ,  H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US09768064B1

公开(公告)日：2017-09-19

申请号：US15210037

申请日：2016-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Chi-Jen Liu ,  Cheng-Chun Chang ,  Yi-Sheng Lin ,  Liang-Guang Chen

IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/311 ,  H01L21/8234

CPC classification number: H01L21/76883 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53266

Abstract: Formation methods of a semiconductor device structure are provided. The method includes providing a substrate having a low topography region and a high low topography region. The method also includes forming a first dielectric layer over the substrate. The method further includes forming a second dielectric layer over the stop layer. In addition, the method includes forming an opening in the first dielectric layer, the stop layer and the second dielectric layer. The method also includes forming a conductive material layer over the second dielectric layer. The conductive material layer fills the opening. The method further includes performing a polishing process over the conductive material layer until a top surface of the stop layer is exposed.

公开(公告)号：US20200279751A1

公开(公告)日：2020-09-03

申请号：US16878473

申请日：2020-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  William Weilun Hong ,  Chi-Hsiang Shen ,  Chia-Wei Ho ,  Yang-Chun Cheng

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768

Abstract: The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.

公开(公告)号：US11773353B2

公开(公告)日：2023-10-03

申请号：US17172939

申请日：2021-02-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pinlei Edmund Chu ,  Chun-Wei Hsu ,  Ling-Fu Nieh ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Yi-Sheng Lin

IPC: H01L21/02 ,  H01L21/302 ,  B08B1/00 ,  C11D11/00 ,  C11D7/26 ,  H01L21/321

CPC classification number: C11D11/0047 ,  C11D7/261 ,  C11D7/268 ,  H01L21/02074 ,  H01L21/3212

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

公开(公告)号：US11094555B2

公开(公告)日：2021-08-17

申请号：US16878473

申请日：2020-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  William Weilun Hong ,  Chi-Hsiang Shen ,  Chia-Wei Ho ,  Yang-Chun Cheng

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768 ,  H01L23/532

Abstract: The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.

公开(公告)号：US20210183688A1

公开(公告)日：2021-06-17

申请号：US17187059

申请日：2021-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Hsuan Lee ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Jian-Ci Lin ,  Chi-Jen Liu ,  Yi-Sheng Lin ,  Yang-Chun Cheng ,  Liang-Guang Chen ,  Kuo-Hsiu Wei ,  Kei-Wei Chen

IPC: H01L21/768 ,  H01L21/3105 ,  C09G1/02 ,  H01L21/02

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

公开(公告)号：US20220384245A1

公开(公告)日：2022-12-01

申请号：US17881938

申请日：2022-08-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Hsuan Lee ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Jian-Ci Lin ,  Chi-Jen Liu ,  Yi-Sheng Lin ,  Yang-Chun Cheng ,  Liang-Guang Chen ,  Kuo-Hsiu Wei ,  Kei-Wei Chen

IPC: H01L21/768 ,  C09G1/02 ,  H01L21/8234

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.