Invention Grant
- Patent Title: Method for forming fin-shaped structure
- Patent Title (中): 形成翅片结构的方法
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Application No.: US13772343Application Date: 2013-02-21
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Publication No.: US09076870B2Publication Date: 2015-07-07
- Inventor: Chien-Ting Lin , Shih-Hung Tsai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/78 ; H01L29/66
Abstract:
A method for forming a fin-shaped structure includes the following steps. A pad layer is formed on a substrate. A sacrificial pattern is formed on the pad layer. A spacer is formed on the pad layer beside the sacrificial pattern, wherein the ratio of the height of the spacer to the pad layer is larger than 5. The sacrificial pattern is removed. The layout of the spacer is transferred to the substrate to form at least a fin-shaped structure having a taper profile in the substrate.
Public/Granted literature
- US20140235043A1 METHOD FOR FORMING FIN-SHAPED STRUCTURE Public/Granted day:2014-08-21
Information query
IPC分类:
