Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13960323Application Date: 2013-08-06
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Publication No.: US09076886B2Publication Date: 2015-07-07
- Inventor: Dong-Il Park , Ae-Gyeong Kim , Jong-Sam Kim , Kyoung-Eun Uhm , Tae-Cheol Lee , Yong-Sang Jeong , Jin-Ha Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0086322 20120807
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8234 ; H01L29/423 ; H01L29/40 ; H01L29/78
Abstract:
A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.
Public/Granted literature
- US20140042528A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-02-13
Information query
IPC分类:
