发明授权
US09076906B2 Hetero-junction bipolar phototransistor with improved noise characteristic
有权
具有改善噪声特性的异质结双极光电晶体管
- 专利标题： Hetero-junction bipolar phototransistor with improved noise characteristic
- 专利标题（中）： 具有改善噪声特性的异质结双极光电晶体管
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申请号： US13138410申请日： 2010-02-12
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公开(公告)号： US09076906B2公开(公告)日： 2015-07-07
- 发明人: Mutsuo Ogura , SungWoo Choi , Nobuyuki Hayama , Katsuhiko Nishida
- 申请人： Mutsuo Ogura , SungWoo Choi , Nobuyuki Hayama , Katsuhiko Nishida
- 申请人地址： JP Tokyo
- 专利权人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- 当前专利权人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- 当前专利权人地址： JP Tokyo
- 代理商 Manabu Kanesaka
- 优先权： JP2009-031235 20090213; JP2009-031236 20090213
- 国际申请： PCT/JP2010/052485 WO 20100212
- 国际公布： WO2010/093058 WO 20100819
- 主分类号： H01L31/102
- IPC分类号： H01L31/102 ; H01L31/0304 ; H01L31/11
摘要：
A hetero-junction bipolar phototransistor includes a photo-absorption layer formed of a first conductivity type semiconductor layer, and a collector operating as a barrier layer, a base layer, and an emitter layer, which are stacked in sequence on the photo-absorption layer. The photo-absorption layer, collector, base layer and emitter layer forms a first mesa structure, and an emitter contact layer forms a second mesa structure. The photo-absorption layer includes a semiconductor layer with a narrow gap corresponding to a light-sensing wavelength of the phototransistor. The collector includes a semiconductor layer with a wider gap than a gap of the photo-absorption layer. The base layer has an energy level equal to or higher than the energy level of the collector. The emitter layer has a wide gap as compared to the base layer, and an energy level in a valence band is lower than an energy level of the base layer.
公开/授权文献
- US20110291158A1 HETERO-JUNCTION BIPOLAR PHOTOTRANSISTOR 公开/授权日：2011-12-01
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