公开(公告)号：US20110291158A1

公开(公告)日：2011-12-01

申请号：US13138410

申请日：2010-02-12

申请人： Mutsuo Ogura ,  SungWoo Choi ,  Nobuyuki Hayama ,  Katsuhiko Nishida

发明人： Mutsuo Ogura ,  SungWoo Choi ,  Nobuyuki Hayama ,  Katsuhiko Nishida

IPC分类号： H01L31/0352

CPC分类号： H01L31/03046 ,  H01L31/1105 ,  Y02E10/544

摘要： The present invention provides a HPT having high sensitivity and extensive wavelength band characteristics. The collector and barrier layer (5) is formed on the photo-absorption layer (6), wherein the energy level in the conduction band is higher than that of the photo-absorption layer (6), the energy level in the valence band is almost equal to or higher than that of the photo-absorption layer (6) and is a relatively wider gap semiconductor than the photo-absorption layer. The base layer (4) formed on the collector and barrier layer (5), is a relatively narrow gap as compared with the collector and barrier layer (5), wherein the energy level in the conduction band is equal to or higher than that of the collector and barrier layer (5) in the boundary of the collector and barrier layer (5). The emitter layer (3) formed on a base layer (4) is a relatively wide gap as compared with the base layer (4), and the energy level in the valence band is the first conductivity type semiconductor layer lower than that of the base layer (4).

摘要翻译： 本发明提供具有高灵敏度和广泛波长带特性的HPT。 在光吸收层（6）上形成集电极和阻挡层（5），其中导带中的能级高于光吸收层（6）的能级，价带中的能级为 几乎等于或高于光吸收层（6），并且是比光吸收层更宽的间隙半导体。 形成在集电极和阻挡层（5）上的基底层（4）与集电极和阻挡层（5）相比是相对窄的间隙，其中导带中的能级等于或高于 在集电体和阻挡层（5）的边界中的集电极和阻挡层（5）。 形成在基底层（4）上的发射极层（3）与基底层（4）相比是相对较宽的间隙，并且价带中的能级是第一导电类型半导体层低于基底层 层（4）。

公开(公告)号：US09076906B2

公开(公告)日：2015-07-07

申请号：US13138410

申请日：2010-02-12

申请人： Mutsuo Ogura ,  SungWoo Choi ,  Nobuyuki Hayama ,  Katsuhiko Nishida

发明人： Mutsuo Ogura ,  SungWoo Choi ,  Nobuyuki Hayama ,  Katsuhiko Nishida

IPC分类号： H01L31/102 ,  H01L31/0304 ,  H01L31/11

CPC分类号： H01L31/03046 ,  H01L31/1105 ,  Y02E10/544

摘要： A hetero-junction bipolar phototransistor includes a photo-absorption layer formed of a first conductivity type semiconductor layer, and a collector operating as a barrier layer, a base layer, and an emitter layer, which are stacked in sequence on the photo-absorption layer. The photo-absorption layer, collector, base layer and emitter layer forms a first mesa structure, and an emitter contact layer forms a second mesa structure. The photo-absorption layer includes a semiconductor layer with a narrow gap corresponding to a light-sensing wavelength of the phototransistor. The collector includes a semiconductor layer with a wider gap than a gap of the photo-absorption layer. The base layer has an energy level equal to or higher than the energy level of the collector. The emitter layer has a wide gap as compared to the base layer, and an energy level in a valence band is lower than an energy level of the base layer.

摘要翻译： 异质结双极性光电晶体管包括由第一导电型半导体层形成的光吸收层和作为阻挡层，基极层和发射极层的集电体，其顺序层叠在光吸收层上 。 光吸收层，集电体，基极层和发射极层形成第一台面结构，并且发射极接触层形成第二台面结构。 光吸收层包括具有对应于光电晶体管的感光波长的窄间隙的半导体层。 集电体包括具有比光吸收层的间隙更宽的间隙的半导体层。 基层具有等于或高于集电极能级的能级。 发射极层与基底层相比具有宽的间隙，并且价带中的能级低于基底层的能级。