Invention Grant
US09076927B2 (In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers
有权
（In，Ga，Al）N-GaN基底层上生长的In（Ga，Al）N光电子器件
- Patent Title: (In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers
- Patent Title (中): （In，Ga，Al）N-GaN基底层上生长的In（Ga，Al）N光电子器件
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Application No.: US14073698Application Date: 2013-11-06
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Publication No.: US09076927B2Publication Date: 2015-07-07
- Inventor: Stacia Keller , Carl J. Neufeld , Umesh K. Mishra , Steven P. DenBaars
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L21/02 ; H01L33/00 ; H01L31/0735 ; H01L31/18 ; H01L33/12
Abstract:
A method of fabricating a heterostructure device, including (a) obtaining a first layer or substrate; (b) growing a second layer on the first layer or substrate; and (c) forming the second layer that is at least partially relaxed wherein (1) the first layer and the second layer have the same lattice structure but different lattice constants, (2) the first layer and the second layer form a heterojunction, and (3) the heterojunction forms an active area of a device or serves as a pseudo-substrate for the device.
Public/Granted literature
- US20140131730A1 (IN,GA,AL)N OPTOELECTRONIC DEVICES GROWN ON RELAXED (IN,GA,AL)N-ON-GAN BASE LAYERS Public/Granted day:2014-05-15
Information query
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