Invention Grant
US09081288B2 Extreme ultraviolet (EUV) mask, method of fabricating the EUV mask and method of inspecting the EUV mask
有权
极紫外（EUV）掩模，制造EUV掩模的方法和检查EUV掩模的方法
- Patent Title: Extreme ultraviolet (EUV) mask, method of fabricating the EUV mask and method of inspecting the EUV mask
- Patent Title (中): 极紫外（EUV）掩模，制造EUV掩模的方法和检查EUV掩模的方法
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Application No.: US13955164Application Date: 2013-07-31
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Publication No.: US09081288B2Publication Date: 2015-07-14
- Inventor: Chih-Tsung Shih , Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
- Applicant: Taiwan Semiconductor Manufacturing Co., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/84 ; G03F1/22
Abstract:
An out-of-band (OoB) suppression layer is applied on a reflective multiplayer (ML) coating, so as to avoid the OoB reflection and to enhance the optical contrast at 13.5 nm. A material having a low reflectivity at wavelength of 193-257 nm, for example, silicon carbide (SiC), is used as the OoB suppression layer. A method of fabricating an EUV mask having the OoB suppression layer and a method of inspecting an EUV mask having the OoB suppression are also provided.
Public/Granted literature
- US20150037712A1 Extreme Ultraviolet (EUV) Mask, Method Of Fabricating The EUV Mask And Method Of Inspecting The EUV Mask Public/Granted day:2015-02-05
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