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    Extreme ultraviolet lithography system, device, and method for printing low pattern density features
    1.
    发明授权
    Extreme ultraviolet lithography system, device, and method for printing low pattern density features 有权

    公开(公告)号：US10162257B2

    公开(公告)日：2018-12-25

    申请号：US15380717

    申请日：2016-12-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

    IPC: G03B27/42 ,  G03F1/26 ,  G03F7/20

    Abstract: A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.

    Extreme Ultraviolet (Euv) Mask And Method Of Fabricating The Euv Mask
    4.
    发明申请
    Extreme Ultraviolet (Euv) Mask And Method Of Fabricating The Euv Mask 有权
    极紫外线（Euv）面膜和制造Euv面膜的方法

    公开(公告)号：US20150064611A1

    公开(公告)日：2015-03-05

    申请号：US14015885

    申请日：2013-08-30

    Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

    Inventor： Chih-Tsung Shih ,  Hsin-Chieh Yao ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Chung-Ju Lee ,  Anthony Yen

    IPC: G03F1/58 ,  G03F1/52

    CPC classification number: G03F1/58 ,  G03F1/24 ,  G03F1/52 ,  G03F1/54

    Abstract: A Cu-containing material is provided as an absorber layer of an EUV mask. With the absorber layer of the Cu-containing material, the same lithography performance of a conventional absorber in 70 nm thickness of TaBN can be achieved by only a 30-nm thickness of the absorber layer according to the various embodiments of the present disclosure. Furthermore, the out-off-band (OOB) flare of the radiation light in 193-257 nm can be reduced so as to achieve the better lithography performance.

    Abstract translation: 提供含Cu材料作为EUV掩模的吸收层。 利用含Cu材料的吸收层，根据本公开的各种实施方案，仅通过吸收层的厚度仅为30nm可以实现70nm厚度的TaBN中的常规吸收体的相同的光刻性能。 此外，可以减少193-257nm的辐射光的带外（OOB）光斑，以获得更好的光刻性能。

    Extreme Ultraviolet Lithography System, Device, and Method for Printing Low Pattern Density Features
    7.
    发明申请
    Extreme Ultraviolet Lithography System, Device, and Method for Printing Low Pattern Density Features 审中-公开

    公开(公告)号：US20200319545A1

    公开(公告)日：2020-10-08

    申请号：US16908449

    申请日：2020-06-22

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

    IPC: G03F1/26 ,  G03F7/20

    Abstract: A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.

    Lithography Method with Reduced Impacts of Mask Defects
    8.
    发明申请
    Lithography Method with Reduced Impacts of Mask Defects 审中-公开

    公开(公告)号：US20190033720A1

    公开(公告)日：2019-01-31

    申请号：US15861156

    申请日：2018-01-03

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shinn-Sheng Yu ,  Ching-Fang Yu ,  Wen-Chuan Wang ,  Ting-Hao Hsu ,  Sheng-Chi Chin ,  Anthony Yen

    IPC: G03F7/20 ,  G03F1/24 ,  G03F1/52

    Abstract: An extreme ultraviolet lithography method is disclosed. In an example, the EUVL method includes forming a resist layer on a substrate; performing a first exposure process to image a first pattern of a first sub-region of a first mask to the resist layer; performing a second exposure process to image a second pattern of a second sub-region of the first mask to the resist layer; and performing a third exposure process to image a third pattern of a first sub-region of a second mask to the resist layer. The second and third patterns are identical to the first pattern. The first, second and third exposure processes collectively form a latent image of the first pattern on the resist layer.

    Method of making an extreme ultraviolet pellicle
    9.
    发明授权
    Method of making an extreme ultraviolet pellicle 有权
    制造极紫外线防护薄膜的方法

    公开(公告)号：US09442368B2

    公开(公告)日：2016-09-13

    申请号：US14980469

    申请日：2015-12-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Tsung Shih ,  Tien-Hsi Lee ,  Chia-Jen Chen ,  Shang-Chieh Chien ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

    IPC: G03F1/64 ,  B29C71/02 ,  G03F7/20

    CPC classification number: G03F1/64 ,  B29C71/02 ,  B29C2071/022 ,  G03F1/62 ,  G03F7/2002

    Abstract: The present disclosure relates to a method of forming an extreme ultraviolet (EUV) pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate. A pellicle frame is attached to an upper surface of the substrate, and the substrate is cleaved along the cleaving plane to form a pellicle film attached to the pellicle frame. The method forms the pellicle without using a support structure, which may block EUV radiation and cause substantial non-uniformities in the intensity of EUV radiation incident on an EUV reticle.

    Abstract translation: 本发明涉及一种形成极紫外（EUV）防护薄膜组件的方法，所述防护薄膜组件具有连接到没有支撑网的防护薄膜框架上的防护薄膜组件及相关装置。 在一些实施例中，通过在衬底内形成切割平面来执行该方法。 防护薄膜组件框架附接到基板的上表面，并且基板沿着切割平面被切割以形成附着到防护薄膜框架上的防护薄膜组件。 该方法不使用支撑结构形成防护薄膜组件，其可以阻挡EUV辐射并且在EUV掩模版上入射的EUV辐射的强度引起实质上的不均匀性。

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