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    METHOD OF MAKING AN EXTREME ULTRAVIOLET PELLICLE
    3.
    发明申请
    METHOD OF MAKING AN EXTREME ULTRAVIOLET PELLICLE 有权
    制备极端超紫外线胶囊的方法

    公开(公告)号：US20160109798A1

    公开(公告)日：2016-04-21

    申请号：US14980469

    申请日：2015-12-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Tsung Shih ,  Tien-Hsi Lee ,  Chia-Jen Chen ,  Shang-Chieh Chien ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

    IPC: G03F1/64

    CPC classification number: G03F1/64 ,  B29C71/02 ,  B29C2071/022 ,  G03F1/62 ,  G03F7/2002

    Abstract: The present disclosure relates to a method of forming an extreme ultraviolet (EUV) pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate. A pellicle frame is attached to an upper surface of the substrate, and the substrate is cleaved along the cleaving plane to form a pellicle film attached to the pellicle frame. The method forms the pellicle without using a support structure, which may block EUV radiation and cause substantial non-uniformities in the intensity of EUV radiation incident on an EUV reticle.

    Abstract translation: 本发明涉及一种形成极紫外（EUV）防护薄膜组件的方法，所述防护薄膜组件具有连接到没有支撑网的防护薄膜框架上的防护薄膜组件及相关装置。 在一些实施例中，通过在衬底内形成切割平面来执行该方法。 防护薄膜组件框架附接到基板的上表面，并且基板沿着切割平面被切割以形成附着到防护薄膜框架上的防护薄膜组件。 该方法不使用支撑结构形成防护薄膜组件，其可以阻挡EUV辐射并且在EUV掩模版上入射的EUV辐射的强度引起实质上的不均匀性。

    Extreme ultraviolet lithography system, device, and method for printing low pattern density features
    5.
    发明授权
    Extreme ultraviolet lithography system, device, and method for printing low pattern density features 有权

    公开(公告)号：US10162257B2

    公开(公告)日：2018-12-25

    申请号：US15380717

    申请日：2016-12-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

    IPC: G03B27/42 ,  G03F1/26 ,  G03F7/20

    Abstract: A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.

    ROTARY EUV COLLECTOR
    8.
    发明申请
    ROTARY EUV COLLECTOR 有权
    旋转EUV收集器

    公开(公告)号：US20150085264A1

    公开(公告)日：2015-03-26

    申请号：US14035268

    申请日：2013-09-24

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

    Inventor： Shang-Chieh Chien ,  Shu-Hao Chang ,  Jui-Ching Wu ,  Tsung-Yu Chen ,  Tzu-Hsiang Chen ,  Ming-Chin Chien ,  Chia-Chen Chen ,  Jeng-Horng Chen

    IPC: G03F7/20

    CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/1821 ,  G03F7/2008 ,  G03F7/2037 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70916 ,  G03F7/70925 ,  G21K1/067

    Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

    Abstract translation: EUV收集器在EUV光刻系统的操作期间或之间旋转。 旋转EUV收集器导致污染物更均匀地分布在收集器的表面上。 这降低了EUV光刻系统随着污染增加而失去图像保真度并从而增加了集电器寿命的速率。 在EUV光刻系统运行期间旋转收集器可以引起对流并降低污染率。 通过以足够的速度旋转收集器，可以通过离心力的作用去除一些污染的碎屑。

    Extreme Ultraviolet (Euv) Mask And Method Of Fabricating The Euv Mask
    9.
    发明申请
    Extreme Ultraviolet (Euv) Mask And Method Of Fabricating The Euv Mask 有权
    极紫外线（Euv）面膜和制造Euv面膜的方法

    公开(公告)号：US20150064611A1

    公开(公告)日：2015-03-05

    申请号：US14015885

    申请日：2013-08-30

    Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

    Inventor： Chih-Tsung Shih ,  Hsin-Chieh Yao ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Chung-Ju Lee ,  Anthony Yen

    IPC: G03F1/58 ,  G03F1/52

    CPC classification number: G03F1/58 ,  G03F1/24 ,  G03F1/52 ,  G03F1/54

    Abstract: A Cu-containing material is provided as an absorber layer of an EUV mask. With the absorber layer of the Cu-containing material, the same lithography performance of a conventional absorber in 70 nm thickness of TaBN can be achieved by only a 30-nm thickness of the absorber layer according to the various embodiments of the present disclosure. Furthermore, the out-off-band (OOB) flare of the radiation light in 193-257 nm can be reduced so as to achieve the better lithography performance.

    Abstract translation: 提供含Cu材料作为EUV掩模的吸收层。 利用含Cu材料的吸收层，根据本公开的各种实施方案，仅通过吸收层的厚度仅为30nm可以实现70nm厚度的TaBN中的常规吸收体的相同的光刻性能。 此外，可以减少193-257nm的辐射光的带外（OOB）光斑，以获得更好的光刻性能。

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