发明授权
- 专利标题： Magnetic element having perpendicular anisotropy with enhanced efficiency
- 专利标题（中）： 磁性元件具有垂直各向异性，效率提高
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申请号： US13779734申请日： 2013-02-27
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公开(公告)号： US09082534B2公开(公告)日： 2015-07-14
- 发明人: Roman Chepulskyy , Dmytro Apalkov
- 申请人： Roman Chepulskyy , Dmytro Apalkov
- 申请人地址： KR
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR
- 代理机构： Renaissance IP Law Group LLP
- 主分类号： H01F1/147
- IPC分类号： H01F1/147 ; H01F10/32 ; G11C11/15 ; H01F1/01 ; G01R33/09 ; B82Y25/00 ; G11C11/16 ; H01L43/08 ; H01L43/10 ; H01L27/22
摘要：
A material composition for forming a free layer in a STT structure (such as a single or dual MTJ structure) can include CoxFeyMz, where M is a non-magnetic material that assists in forming a good crystalline orientation and matching between the free layer and an MgO interface. The material M preferably either does not segregate to the MgO interface or, if it does segregate to the MgO interface, it does not significantly reduce the PMA of the free layer. The free layer can further include a connecting layer, where M is attracted to the insertion layer during annealing. The free layer can include a graded composition of CoxFeyMz, where z changes within the free layer.
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