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    MAGNETIC ELEMENT HAVING PERPENDICULAR ANISOTROPY WITH ENHANCED EFFICIENCY
    4.
    发明申请
    MAGNETIC ELEMENT HAVING PERPENDICULAR ANISOTROPY WITH ENHANCED EFFICIENCY 有权
    具有增强效率的均匀性的磁性元件

    公开(公告)号：US20130177781A1

    公开(公告)日：2013-07-11

    申请号：US13779734

    申请日：2013-02-27

    申请人： Roman Chepulskyy ,  Dmytro Apalkov

    发明人： Roman Chepulskyy ,  Dmytro Apalkov

    IPC分类号： H01F1/01 ,  H01F10/32

    CPC分类号： H01F1/01 ,  B82Y25/00 ,  G01R33/091 ,  G01R33/098 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/115

    摘要： A material composition for forming a free layer in a STT structure (such as a single or dual MTJ structure) can include CoxFeyMz, where M is a non-magnetic material that assists in forming a good crystalline orientation and matching between the free layer and an MgO interface. The material M preferably either does not segregate to the MgO interface or, if it does segregate to the MgO interface, it does not significantly reduce the PMA of the free layer. The free layer can further include a connecting layer, where M is attracted to the insertion layer during annealing. The free layer can include a graded composition of CoxFeyMz, where z changes within the free layer.

    摘要翻译： 用于在STT结构（例如单个或双重MTJ结构）中形成自由层的材料组合物可以包括CoxFeyMz，其中M是有助于形成良好的晶体取向的非磁性材料，并且自由层与 MgO界面。 材料M优选不分离到MgO界面，或者如果它分离到MgO界面，则其不会显着降低自由层的PMA。 自由层还可包括连接层，其中M在退火期间被吸引到插入层。 自由层可以包括CoxFeyMz的分级组成，其中z在自由层内变化。

    Method and system for providing a magnetic junction configured for precessional switching using a bias structure
    5.
    发明授权
    Method and system for providing a magnetic junction configured for precessional switching using a bias structure 有权
    用于提供使用偏置结构配置为进动切换的磁结的方法和系统

    公开(公告)号：US09142758B2

    公开(公告)日：2015-09-22

    申请号：US13495830

    申请日：2012-06-13

    申请人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

    发明人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

    IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L27/22

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

    摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching.

    摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括具有第一固定层磁化的第一被钉扎层，第一非磁性间隔层和具有易轴的自由层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结并且使得自由层采用进动切换时，自由层可在多个稳定磁状态之间切换。

    METHOD AND SYSTEM FOR PROVIDING MULTIPLE SELF-ALIGNED LOGIC CELLS IN A SINGLE STACK
    7.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING MULTIPLE SELF-ALIGNED LOGIC CELLS IN A SINGLE STACK 有权
    在单堆栈中提供多个自对准逻辑单元的方法和系统

    公开(公告)号：US20150200357A1

    公开(公告)日：2015-07-16

    申请号：US13604182

    申请日：2012-09-05

    申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Alexander A.G. Driskill-Smith

    发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Alexander A.G. Driskill-Smith

    IPC分类号： H01L43/12 ,  H01L43/08 ,  H01L43/02

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/5607 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    摘要： A magnetic device including memory cells is provided. Each memory cell can store multiple bits corresponding to multiple data storage layers. Desired spacing(s) and desired junction angle(s) for the data storage layers are determined in each memory cell. The desired junction angle(s) and the desired spacing(s) correspond to spin transfer switching currents for the data storage layers having. A magnetoresistive stack including plurality of layers for each of the memory cells is deposited. The memory cells include the data storage layers. A data storage layer layers is spaced apart from nearest data storage layer(s) by a distance corresponding to the desired spacing(s). A mask corresponding to the memory cells is provided on the layers. The memory cells are defined such that each memory cell has the desired junction angle(s) and the desired spacing(s) and such that the data storage layers for each of the memory cells is self-aligned.

    摘要翻译： 提供包括存储单元的磁性装置。 每个存储器单元可以存储对应于多个数据存储层的多个位。 在每个存储单元中确定数据存储层的期望间隔和所需的结合角度。 期望的结角和期望的间隔对应于具有数据存储层的自旋转移开关电流。 存储包括用于每个存储器单元的多个层的磁阻堆叠。 存储单元包括数据存储层。 数据存储层层与最近的数据存储层间隔一段与期望间隔相对应的距离。 在层上提供对应于存储单元的掩模。 存储器单元被定义为使得每个存储器单元具有期望的结合角和期望的间隔，并且使得每个存储器单元的数据存储层是自对准的。

    Method and system for providing magnetic junctions having a graded magnetic free layer
    8.
    发明授权
    Method and system for providing magnetic junctions having a graded magnetic free layer 有权
    用于提供具有渐变磁性层的磁结的方法和系统

    公开(公告)号：US08890267B2

    公开(公告)日：2014-11-18

    申请号：US13691873

    申请日：2012-12-03

    申请人： Dmytro Apalkov ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

    发明人： Dmytro Apalkov ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

    IPC分类号： H01L27/22 ,  H01L43/08 ,  G11C11/16

    CPC分类号： H01L27/222 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607 ,  H01L43/08 ,  H01L43/12

    摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has a gradient in a critical switching current density (Jc0) such that a first Jc0 of a first portion of the free layer is lower than a second Jc0 of a second portion of the free layer. The second portion of the free layer is further from the nonmagnetic spacer layer than the first portion is. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层具有临界开关电流密度（Jc0）的梯度，使得自由层的第一部分的第一Jc0低于自由层的第二部分的第二部分Jc0。 自由层的第二部分比第一部分更远离非磁性间隔层。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

    Magnetic memory including magnetic memory cells integrated with a magnetic shift register and methods thereof
    10.
    发明授权
    Magnetic memory including magnetic memory cells integrated with a magnetic shift register and methods thereof 有权
    磁存储器包括与磁移位寄存器集成的磁存储单元及其方法

    公开(公告)号：US08649214B2

    公开(公告)日：2014-02-11

    申请号：US13332230

    申请日：2011-12-20

    申请人： Dmytro Apalkov ,  Vladimir Nikitin ,  Alexey Vasilyevitch Khvalkovskiy

    发明人： Dmytro Apalkov ,  Vladimir Nikitin ,  Alexey Vasilyevitch Khvalkovskiy

    IPC分类号： G11C11/15

    CPC分类号： G11C19/0841 ,  G11C11/161 ,  G11C11/1675

    摘要： A magnetic memory includes magnetic memory elements corresponding to magnetic memory cells and at least one shift register. Each magnetic memory element includes a pinned layer, a free layer, and a nonmagnetic spacer layer between the pinned and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic memory element. The shift register(s) correspond to the magnetic memory elements. Each shift register includes domains separated by domain walls. A domain is antiparallel to an adjoining domain. The shift register(s) are configured such that an equilibrium state aligns a portion of the domains with the magnetic memory elements. The shift register(s) are also configured such that each domain wall shifts to a location of an adjoining domain wall when a shift current is passed through the shift register(s) in a direction along adjoining domains.

    摘要翻译： 磁存储器包括对应于磁存储器单元和至少一个移位寄存器的磁存储元件。 每个磁存储元件包括被钉扎层，自由层和在钉扎层和自由层之间的非磁性间隔层。 当写入电流通过磁存储元件时，自由层可在稳定磁状态之间切换。 移位寄存器对应于磁存储元件。 每个移位寄存器包括由畴壁分隔的域。 一个域与相邻域反向并行。 移位寄存器被配置为使得平衡状态将磁畴的一部分与磁存储元件对准。 移位寄存器还被配置为使得当移位电流沿着相邻域的方向通过移位寄存器时，每个域壁移动到相邻畴壁的位置。