Invention Grant
- Patent Title: Atomic layer deposition encapsulation for acoustic wave devices
- Patent Title (中): 用于声波器件的原子层沉积封装
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Application No.: US13863808Application Date: 2013-04-16
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Publication No.: US09082953B2Publication Date: 2015-07-14
- Inventor: Merrill Albert Hatcher, Jr. , Jayanti Jaganatha Rao , John Robert Siomkos
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L41/18
- IPC: H01L41/18 ; H03H9/25 ; B05D1/00 ; B05D5/12 ; H01L41/053 ; C23C16/40 ; C23C16/455 ; H03H9/02 ; H03H3/08
Abstract:
Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
Public/Granted literature
- US20130230643A1 ATOMIC LAYER DEPOSITION ENCAPSULATION FOR ACOUSTIC WAVE DEVICES Public/Granted day:2013-09-05
Information query
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