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公开(公告)号：US20130221800A1
公开(公告)日：2013-08-29
申请号：US13863841
申请日：2013-04-16
Applicant: RF Micro Devices, Inc.
IPC: H01L41/053
CPC classification number: H01L41/0533 , C23C16/403 , C23C16/45525 , H03H3/08 , H03H9/02929
Abstract: Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
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Patent Agency Ranking
公开(公告)号：US09082953B2
公开(公告)日：2015-07-14
申请号：US13863808
申请日：2013-04-16
Applicant: RF Micro Devices, Inc.
IPC: H01L41/18 , H03H9/25 , B05D1/00 , B05D5/12 , H01L41/053 , C23C16/40 , C23C16/455 , H03H9/02 , H03H3/08
CPC classification number: H01L41/0533 , C23C16/403 , C23C16/45525 , H03H3/08 , H03H9/02929
Abstract: Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
Abstract translation: 本文公开了声波装置和在声波装置上涂覆氧化铝（Al 2 O 3）保护膜的方法。 通过原子层沉积（ALD）工艺施加保护膜。 ALD工艺可以以精确控制的方式在声波装置的表面上沉积非常薄的氧化铝层。 因此，均匀的膜不会使声波装置的操作显着失真。
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公开(公告)号：US20130230643A1
公开(公告)日：2013-09-05
申请号：US13863808
申请日：2013-04-16
Applicant: RF MICRO DEVICES, INC.
IPC: H03H3/08
CPC classification number: H01L41/0533 , C23C16/403 , C23C16/45525 , H03H3/08 , H03H9/02929
Abstract: Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
Abstract translation: 本文公开了声波装置和在声波装置上涂覆氧化铝（Al 2 O 3）保护膜的方法。 通过原子层沉积（ALD）工艺施加保护膜。 ALD工艺可以以精确控制的方式在声波装置的表面上沉积非常薄的氧化铝层。 因此，均匀的膜不会使声波装置的操作显着失真。
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公开(公告)号：US09799444B2
公开(公告)日：2017-10-24
申请号：US14840216
申请日：2015-08-31
Applicant: RF Micro Devices, Inc.
Inventor： Marcus Granger-Jones , John Robert Siomkos , Jeppe Korshøj Bendixen , John Avery Capwell , Jayanti Jaganatha Rao
CPC classification number: H01F38/14 , H01F21/12 , H01F2038/146 , H03H7/465 , H03H7/48
Abstract: This disclosure relates generally to directional couplers. In one embodiment, a directional coupler includes a first port, a second port, a third port, a first inductive element, a second inductive element, a first switchable path, and a second switchable path. The first inductive element is coupled between the first port and the second port, while the second inductive element is mutually coupled to the first inductive element. The first switchable path is configured to be opened and closed, wherein the first switchable path is coupled between a first location of the second inductive element and the third port. The second switchable path is configured to be opened and closed, wherein the second switchable path is coupled between a second location of the second inductive element and the third port. In this manner, a directivity of the directional coupler can be switched between a forward direction and a reverse direction.
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公开(公告)号：US20160065167A1
公开(公告)日：2016-03-03
申请号：US14840216
申请日：2015-08-31
Applicant: RF Micro Devices, Inc.
Inventor： Marcus Granger-Jones , John Robert Siomkos , Jeppe Korshøj Bendixen , John Avery Capwell , Jayanti Jaganatha Rao
CPC classification number: H01F38/14 , H01F21/12 , H01F2038/146 , H03H7/465 , H03H7/48
Abstract: This disclosure relates generally to directional couplers. In one embodiment, a directional coupler includes a first port, a second port, a third port, a first inductive element, a second inductive element, a first switchable path, and a second switchable path. The first inductive element is coupled between the first port and the second port, while the second inductive element is mutually coupled to the first inductive element. The first switchable path is configured to be opened and closed, wherein the first switchable path is coupled between a first location of the second inductive element and the third port. The second switchable path is configured to be opened and closed, wherein the second switchable path is coupled between a second location of the second inductive element and the third port. In this manner, a directivity of the directional coupler can be switched between a forward direction and a reverse direction.
Abstract translation: 本公开一般涉及定向耦合器。 在一个实施例中，定向耦合器包括第一端口，第二端口，第三端口，第一感应元件，第二感应元件，第一可切换路径和第二可切换路径。 第一电感元件耦合在第一端口和第二端口之间，而第二电感元件相互耦合到第一电感元件。 第一可切换路径被配置为打开和关闭，其中第一可切换路径耦合在第二电感元件的第一位置和第三端口之间。 第二可切换路径被配置为打开和关闭，其中第二可切换路径耦合在第二电感元件的第二位置和第三端口之间。 以这种方式，定向耦合器的方向性可以在正向和反向之间切换。
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公开(公告)号：US09349938B2
公开(公告)日：2016-05-24
申请号：US13863841
申请日：2013-04-16
Applicant: RF Micro Devices, Inc.
IPC: H03H9/25 , H01L41/053 , C23C16/40 , C23C16/455 , H03H9/02 , H03H3/08
CPC classification number: H01L41/0533 , C23C16/403 , C23C16/45525 , H03H3/08 , H03H9/02929
Abstract: Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
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