Invention Grant
US09085493B2 Process for production of silicon-carbide-coated carbon base material, silicon-carbide-coated carbon base material, sintered (silicon carbide)-carbon complex, ceramic-coated sintered (silicon carbide)-carbon complex, and process for production of sintered (silicon carbide)-carbon complex
有权
碳化硅涂覆的碳基材料,碳化硅涂覆的碳基材料,烧结(碳化硅) - 碳配合物,陶瓷涂覆的烧结(碳化硅) - 碳配合物的生产方法和烧结( 碳化硅) - 碳复合物
- Patent Title: Process for production of silicon-carbide-coated carbon base material, silicon-carbide-coated carbon base material, sintered (silicon carbide)-carbon complex, ceramic-coated sintered (silicon carbide)-carbon complex, and process for production of sintered (silicon carbide)-carbon complex
- Patent Title (中): 碳化硅涂覆的碳基材料,碳化硅涂覆的碳基材料,烧结(碳化硅) - 碳配合物,陶瓷涂覆的烧结(碳化硅) - 碳配合物的生产方法和烧结( 碳化硅) - 碳复合物
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Application No.: US13392593Application Date: 2010-09-01
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Publication No.: US09085493B2Publication Date: 2015-07-21
- Inventor: Masaharu Nakamura , Yoshinari Miyamoto , Tetsuro Tojo
- Applicant: Masaharu Nakamura , Yoshinari Miyamoto , Tetsuro Tojo
- Applicant Address: JP Osaka
- Assignee: Toyo Tanso Co., Ltd.
- Current Assignee: Toyo Tanso Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2009-205041 20090904
- International Application: PCT/JP2010/064871 WO 20100901
- International Announcement: WO2011/027756 WO 20110310
- Main IPC: B32B5/16
- IPC: B32B5/16 ; C04B35/575 ; C04B35/645 ; C04B41/00 ; B82Y30/00 ; C04B35/52 ; C04B35/626 ; C04B35/628 ; C04B41/50 ; C04B41/87 ; C23C14/06 ; C01B31/36 ; C04B111/00

Abstract:
Produced is a silicon carbide-coated carbon base material in which a silicon carbide coating is densely and uniformly formed on the surface of a carbon base material, such as graphite. A production process includes the steps of: preparing a carbon base material the surface of which has basal plane sites of an SP2 carbon structure with no dangling bond and edge plane sites of an SP2 carbon structure with a dangling bond; and reacting the surface of the carbon base material with SiO gas in an atmosphere at a temperature of 1400° C. to 1600° C. and a pressure of 1 to 150 Pa to form silicon carbide, whereby the carbon base material coated with silicon carbide is produced.
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