Invention Grant
- Patent Title: Testing and repairing apparatus of through silicon via in stacked-chip
- Patent Title (中): 通过硅片通过堆芯片测试和修复设备
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Application No.: US13326331Application Date: 2011-12-15
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Publication No.: US09086455B2Publication Date: 2015-07-21
- Inventor: Hsin-Chi Lai , Chih-Sheng Lin , Pi-Feng Chiu , Zhe-Hui Lin
- Applicant: Hsin-Chi Lai , Chih-Sheng Lin , Pi-Feng Chiu , Zhe-Hui Lin
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW100137526A 20111017
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/3185 ; G01R31/28 ; G01R31/317 ; H01L21/66

Abstract:
A testing and repairing apparatus of through silicon via (TSV) disposed between a first and a second chips is provided. First terminals of a first and a second switches are coupled to a first terminal of the TSV. First terminals of a third and a fourth switches are coupled to a second terminal of the TSV. A first terminal of a first resister is coupled to a first voltage. A first selector is coupled between second terminals of the second switch and the first resister. A second selector is coupled between a second terminal of the fourth switch and a second voltage. A first control circuit detects the second terminal of the second switch, and controls the first switch, the second switch and the first selector. A second control circuit controls the third switch, the fourth switch and the second selector.
Public/Granted literature
- US20130093454A1 TESTING AND REPAIRING APPARATUS OF THROUGH SILICON VIA IN STACKED-CHIP Public/Granted day:2013-04-18
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