Invention Grant
US09087580B2 Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
有权
具有挥发性和非挥发性功能的半导体存储器，包括电阻变化材料和操作方法
- Patent Title: Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
- Patent Title (中): 具有挥发性和非挥发性功能的半导体存储器，包括电阻变化材料和操作方法
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Application No.: US13244812Application Date: 2011-09-26
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Publication No.: US09087580B2Publication Date: 2015-07-21
- Inventor: Yuniarto Widjaja
- Applicant: Yuniarto Widjaja
- Applicant Address: US CA Cupertino
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Law Office of Alan W Cannon
- Agent Alan W. Cannon
- Main IPC: G11C14/00
- IPC: G11C14/00 ; G11C11/14 ; G11C11/404 ; G11C11/56 ; G11C13/00 ; H01L27/108 ; H01L27/24 ; H01L29/78
Abstract:
Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.
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