Invention Grant
US09087602B2 Volatile memory device capable of relieving disturbances of adjacent memory cells and refresh method thereof
有权
能够缓解相邻存储单元的干扰的易失性存储器件及其刷新方法
- Patent Title: Volatile memory device capable of relieving disturbances of adjacent memory cells and refresh method thereof
- Patent Title (中): 能够缓解相邻存储单元的干扰的易失性存储器件及其刷新方法
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Application No.: US14219374Application Date: 2014-03-19
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Publication No.: US09087602B2Publication Date: 2015-07-21
- Inventor: Jae-Youn Youn , Su-A Kim , Chul-Woo Park , Young-Soo Sohn
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0061979 20130530
- Main IPC: G11C7/20
- IPC: G11C7/20 ; G11C11/406
Abstract:
Provided is a refresh method of a volatile memory device. The method includes: detecting a number of disturbances that affect a second memory area as the number of accesses to a first memory area is increased; outputting an alert signal from the volatile memory device to an outside of the volatile memory device when the detected number of disturbances reach a reference value; and performing a refresh operation on the second memory area in response to the alert signal.
Public/Granted literature
- US20140355332A1 VOLATILE MEMORY DEVICE AND REFRESH METHOD THEREOF Public/Granted day:2014-12-04
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