Invention Grant
- Patent Title: Method of programming non-volatile memory device and non-volatile memory device using the same
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Application No.: US14614992Application Date: 2015-02-05
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Publication No.: US09087608B2Publication Date: 2015-07-21
- Inventor: Moosung Kim , Ohsuk Kwon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2008-0103198 20081021
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C11/56 ; G11C7/10
Abstract:
A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.
Public/Granted literature
- US20150146485A1 METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE AND NON-VOLATILE MEMORY DEVICE USING THE SAME Public/Granted day:2015-05-28
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