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US09087701B2 Semiconductor device and method of embedding TSV semiconductor die within substrate for vertical interconnect in POP 有权
半导体器件和嵌入TSV半导体管芯在基板内的垂直互连的方法

Semiconductor device and method of embedding TSV semiconductor die within substrate for vertical interconnect in POP
摘要：
A semiconductor device has a substrate with a first conductive layer over a surface of the substrate and a plurality of cavities exposing the first conductive layer. A first semiconductor die having conductive TSV is mounted into the cavities of the substrate. A first insulating layer is formed over the substrate and first semiconductor die and extends into the cavities to embed the first semiconductor die within the substrate. A portion of the first insulating layer is removed to expose the conductive TSV. A second conductive layer is formed over the conductive TSV. A portion of the first conductive layer is removed to form electrically common or electrically isolated conductive segments of the first conductive layer. A second insulating layer is formed over the substrate and conductive segments of the first conductive layer. A second semiconductor die is mounted over the substrate electrically connected to the second conductive layer.
摘要（中）：

半导体器件具有在衬底的表面上具有第一导电层的衬底和暴露第一导电层的多个空腔。 具有导电TSV的第一半导体管芯被安装到基板的空腔中。 第一绝缘层形成在衬底和第一半导体管芯上并延伸到空腔中以将第一半导体管芯嵌入衬底内。 去除第一绝缘层的一部分以暴露导电TSV。 在导电TSV上形成第二导电层。 去除第一导电层的一部分以形成第一导电层的电通常或电隔离的导电段。 第二绝缘层形成在衬底和第一导电层的导电段上。 第二半导体管芯安装在电连接到第二导电层上的衬底上。

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