Invention Grant
US09087708B2 IC with floating buried layer ring for isolation of embedded islands
有权
IC具有浮动掩埋层环，用于隔离嵌入岛
- Patent Title: IC with floating buried layer ring for isolation of embedded islands
- Patent Title (中): IC具有浮动掩埋层环，用于隔离嵌入岛
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Application No.: US13960472Application Date: 2013-08-06
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Publication No.: US09087708B2Publication Date: 2015-07-21
- Inventor: John Lin , Philip L. Hower
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank Cimino
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/06 ; H01L27/092 ; H01L21/8238 ; H01L27/02 ; H01L27/06
Abstract:
An integrated circuit (IC) includes a substrate having a p-type semiconductor surface. A first nwell includes an area surrounding a first plurality of semiconductor devices formed in the semiconductor surface having a first n-buried layer (NBL) thereunder. A vertical diode formed in the semiconductor surface surrounds the first nwell including a pwell on top of a floating NBL ring. A second nwell formed in the semiconductor surface includes an area surrounding the floating NBL ring and surrounds a second plurality of semiconductor devices having a second NBL thereunder.
Public/Granted literature
- US20150041907A1 IC WITH FLOATING BURIED LAYER RING FOR ISOLATION OF EMBEDDED ISLANDS Public/Granted day:2015-02-12
Information query
IPC分类:
