Invention Grant
US09087828B2 Semiconductor device with thick bottom metal and preparation method thereof
有权
具有厚底金属的半导体器件及其制备方法
- Patent Title: Semiconductor device with thick bottom metal and preparation method thereof
- Patent Title (中): 具有厚底金属的半导体器件及其制备方法
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Application No.: US13797440Application Date: 2013-03-12
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Publication No.: US09087828B2Publication Date: 2015-07-21
- Inventor: Hamza Yilmaz , Yan Xun Xue , Jun Lu , Ming-Chen Lu , Yan Huo , Aihua Lu
- Applicant: Hamza Yilmaz , Yan Xun Xue , Jun Lu , Ming-Chen Lu , Yan Huo , Aihua Lu
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha & Omega Semiconductor Incorporated
- Current Assignee: Alpha & Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agent Chein-Hwa S. Tsao; Lance A. Li
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L23/495 ; H01L21/58 ; H01L23/00 ; H01L23/433 ; H01L23/492
Abstract:
A semiconductor device with thick bottom metal comprises a semiconductor chip covered with a top plastic package layer at its front surface and a back metal layer at its back surface, the top plastic package layer surrounds sidewalls of the metal bumps with a top surface of the metal bumps exposing from the top plastic package layer, a die paddle for the semiconductor chip to mount thereon and a plastic package body.
Public/Granted literature
- US20140264802A1 Semiconductor Device with Thick Bottom Metal and Preparation Method Thereof Public/Granted day:2014-09-18
Information query
IPC分类:
