公开(公告)号：US09087828B2

公开(公告)日：2015-07-21

申请号：US13797440

申请日：2013-03-12

申请人： Hamza Yilmaz ,  Yan Xun Xue ,  Jun Lu ,  Ming-Chen Lu ,  Yan Huo ,  Aihua Lu

发明人： Hamza Yilmaz ,  Yan Xun Xue ,  Jun Lu ,  Ming-Chen Lu ,  Yan Huo ,  Aihua Lu

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L23/495 ,  H01L21/58 ,  H01L23/00 ,  H01L23/433 ,  H01L23/492

CPC分类号： H01L23/49503 ,  H01L21/561 ,  H01L21/566 ,  H01L21/6836 ,  H01L23/3121 ,  H01L23/3185 ,  H01L23/4334 ,  H01L23/492 ,  H01L23/49541 ,  H01L23/49568 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/056 ,  H01L2224/05644 ,  H01L2224/1184 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/83 ,  H01L2224/03

摘要： A semiconductor device with thick bottom metal comprises a semiconductor chip covered with a top plastic package layer at its front surface and a back metal layer at its back surface, the top plastic package layer surrounds sidewalls of the metal bumps with a top surface of the metal bumps exposing from the top plastic package layer, a die paddle for the semiconductor chip to mount thereon and a plastic package body.

摘要翻译： 具有厚底部金属的半导体器件包括在其前表面覆盖有顶部塑料封装层的半导体芯片和在其后表面处的背面金属层，顶部塑料封装层围绕金属凸块的侧壁与金属的顶表面 从顶部塑料封装层暴露的凸起，用于半导体芯片的芯片安装在其上以及塑料封装主体。

公开(公告)号：US20140264802A1

公开(公告)日：2014-09-18

申请号：US13797440

申请日：2013-03-12

申请人： Hamza Yilmaz ,  Yan Xun Xue ,  Jun Lu ,  Ming-Chen Lu ,  Yan Huo ,  Aihua Lu

发明人： Hamza Yilmaz ,  Yan Xun Xue ,  Jun Lu ,  Ming-Chen Lu ,  Yan Huo ,  Aihua Lu

IPC分类号： H01L23/495 ,  H01L21/58

CPC分类号： H01L23/49503 ,  H01L21/561 ,  H01L21/566 ,  H01L21/6836 ,  H01L23/3121 ,  H01L23/3185 ,  H01L23/4334 ,  H01L23/492 ,  H01L23/49541 ,  H01L23/49568 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/056 ,  H01L2224/05644 ,  H01L2224/1184 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/83 ,  H01L2224/03

摘要： A semiconductor device with thick bottom metal comprises a semiconductor chip covered with a top plastic package layer at its front surface and a back metal layer at its back surface, the top plastic package layer surrounds sidewalls of the metal bumps with a top surface of the metal bumps exposing from the top plastic package layer, a die paddle for the semiconductor chip to mount thereon and a plastic package body.

摘要翻译： 具有厚底部金属的半导体器件包括在其前表面覆盖有顶部塑料封装层的半导体芯片和在其后表面处的背面金属层，顶部塑料封装层围绕金属凸块的侧壁与金属的顶表面 从顶部塑料封装层暴露的凸起，用于半导体芯片的芯片安装在其上以及塑料封装主体。

公开(公告)号：US09054091B2

公开(公告)日：2015-06-09

申请号：US13913770

申请日：2013-06-10

申请人： Hamza Yilmaz ,  Yan Xun Xue ,  Jun Lu ,  Peter Wilson ,  Yan Huo ,  Zhiqiang Niu ,  Ming-Chen Lu

发明人： Hamza Yilmaz ,  Yan Xun Xue ,  Jun Lu ,  Peter Wilson ,  Yan Huo ,  Zhiqiang Niu ,  Ming-Chen Lu

IPC分类号： H01L23/495 ,  H01L23/48 ,  H01L23/52 ,  H01L23/02 ,  H01L23/34 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L23/49568 ,  H01L21/4825 ,  H01L21/561 ,  H01L21/565 ,  H01L21/768 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49503 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49555 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/544 ,  H01L24/40 ,  H01L24/41 ,  H01L24/83 ,  H01L25/0655 ,  H01L25/50 ,  H01L2223/5446 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73104 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A hybrid packaging multi-chip semiconductor device comprises a lead frame unit, a first semiconductor chip, a second semiconductor chip, a first interconnecting structure and a second interconnecting structure, wherein the first semiconductor chip is attached on a first die paddle and the second semiconductor chip is flipped and attached on a third pin and a second die paddle, the first interconnecting structure electrically connecting a first electrode at a front surface of the first semiconductor chip and a third electrode at a back surface of the second semiconductor chip and a second electrode at the front surface of the first semiconductor chip is electrically connected by second interconnecting structure.

摘要翻译： 一种混合封装多芯片半导体器件，包括引线框单元，第一半导体芯片，第二半导体芯片，第一互连结构和第二互连结构，其中第一半导体芯片附接在第一裸片上，第二半导体 芯片被翻转并附接在第三引脚和第二管芯焊盘上，第一互连结构电连接第一半导体芯片的前表面处的第一电极和第二半导体芯片的后表面处的第三电极和第二电极 在第一半导体芯片的前表面通过第二互连结构电连接。

公开(公告)号：US20140361420A1

公开(公告)日：2014-12-11

申请号：US13913770

申请日：2013-06-10

申请人： Hamza Yilmaz ,  Yan Xun Xue ,  Jun Lu ,  Peter Wilson ,  Yan Huo ,  Zhiqiang Niu ,  Ming-Chen Lu

发明人： Hamza Yilmaz ,  Yan Xun Xue ,  Jun Lu ,  Peter Wilson ,  Yan Huo ,  Zhiqiang Niu ,  Ming-Chen Lu

IPC分类号： H01L23/495

CPC分类号： H01L23/49568 ,  H01L21/4825 ,  H01L21/561 ,  H01L21/565 ,  H01L21/768 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49503 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49555 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/544 ,  H01L24/40 ,  H01L24/41 ,  H01L24/83 ,  H01L25/0655 ,  H01L25/50 ,  H01L2223/5446 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73104 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A hybrid packaging multi-chip semiconductor device comprises a lead frame unit, a first semiconductor chip, a second semiconductor chip, a first interconnecting structure and a second interconnecting structure, wherein the first semiconductor chip is attached on a first die paddle and the second semiconductor chip is flipped and attached on a third pin and a second die paddle, the first interconnecting structure electrically connecting a first electrode at a front surface of the first semiconductor chip and a third electrode at a back surface of the second semiconductor chip and a second electrode at the front surface of the first semiconductor chip is electrically connected by second interconnecting structure.

摘要翻译： 一种混合封装多芯片半导体器件，包括引线框单元，第一半导体芯片，第二半导体芯片，第一互连结构和第二互连结构，其中第一半导体芯片附接在第一裸片上，第二半导体 芯片被翻转并附接在第三引脚和第二管芯焊盘上，第一互连结构电连接第一半导体芯片的前表面处的第一电极和第二半导体芯片的后表面处的第三电极和第二电极 在第一半导体芯片的前表面通过第二互连结构电连接。

公开(公告)号：US20150021780A1

公开(公告)日：2015-01-22

申请号：US13946949

申请日：2013-07-19

申请人： Yuping Gong ,  Yan Xun Xue ,  Ming-Chen Lu ,  Ping Huang ,  Jun Lu ,  Hamza Yilmaz

发明人： Yuping Gong ,  Yan Xun Xue ,  Ming-Chen Lu ,  Ping Huang ,  Jun Lu ,  Hamza Yilmaz

IPC分类号： H01L23/13 ,  H01L23/00

CPC分类号： H05K3/306 ,  H01L23/13 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L24/06 ,  H01L24/24 ,  H01L24/25 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/82 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/89 ,  H01L24/92 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/24101 ,  H01L2224/24147 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2224/92224 ,  H01L2924/00014 ,  H01L2924/0781 ,  H01L2924/13091 ,  H01L2924/15153 ,  H05K3/32 ,  H05K3/4697 ,  Y10T29/4913 ,  Y10T29/49139 ,  Y10T29/49165 ,  Y10T29/49169 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/8384 ,  H01L2224/8485 ,  H01L2224/8385

摘要： A thin power device comprises a substrate having a first set of first contact pads at a front surface of the substrate electrically connecting to a second set of second contact pads at a back surface of the substrate, a through opening opened from the front surface and through the substrate exposing a third contact pad at the back surface of the substrate, a semiconductor chip embedded into the through opening with a back metal layer at a back surface of the semiconductor chip attached on the third contact pad, and a plurality of conductive structures electrically connecting electrodes at a front surface of the semiconductor chip with the corresponding first contact pads in the first sets of first contact pads.

摘要翻译： 薄功率器件包括衬底，衬底在衬底的前表面处具有第一组第一接触焊盘，电连接到衬底的背面处的第二组第二接触焊盘，从前表面开口并穿过 所述基板在所述基板的背面暴露第三接触焊盘，在所述第三接触焊盘的所述半导体芯片的后表面处嵌入所述通孔中的背面金属层的半导体芯片，以及多个导电结构， 将所述半导体芯片的前表面处的电极与所述第一组第一接触焊盘中的对应的第一接触焊盘连接。

公开(公告)号：US09006901B2

公开(公告)日：2015-04-14

申请号：US13946949

申请日：2013-07-19

申请人： Yuping Gong ,  Yan Xun Xue ,  Ming-Chen Lu ,  Ping Huang ,  Jun Lu ,  Hamza Yilmaz

发明人： Yuping Gong ,  Yan Xun Xue ,  Ming-Chen Lu ,  Ping Huang ,  Jun Lu ,  Hamza Yilmaz

IPC分类号： H01L23/02 ,  H01L23/13 ,  H01L23/00

CPC分类号： H05K3/306 ,  H01L23/13 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L24/06 ,  H01L24/24 ,  H01L24/25 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/82 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/89 ,  H01L24/92 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/24101 ,  H01L2224/24147 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2224/92224 ,  H01L2924/00014 ,  H01L2924/0781 ,  H01L2924/13091 ,  H01L2924/15153 ,  H05K3/32 ,  H05K3/4697 ,  Y10T29/4913 ,  Y10T29/49139 ,  Y10T29/49165 ,  Y10T29/49169 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/8384 ,  H01L2224/8485 ,  H01L2224/8385

摘要： A thin power device comprises a substrate having a first set of first contact pads at a front surface of the substrate electrically connecting to a second set of second contact pads at a back surface of the substrate, a through opening opened from the front surface and through the substrate exposing a third contact pad at the back surface of the substrate, a semiconductor chip embedded into the through opening with a back metal layer at a back surface of the semiconductor chip attached on the third contact pad, and a plurality of conductive structures electrically connecting electrodes at a front surface of the semiconductor chip with the corresponding first contact pads in the first sets of first contact pads.

摘要翻译： 薄功率器件包括衬底，衬底在衬底的前表面处具有第一组第一接触焊盘，电连接到衬底的背面处的第二组第二接触焊盘，从前表面开口并穿过 所述基板在所述基板的背面暴露第三接触焊盘，在所述第三接触焊盘的所述半导体芯片的后表面处嵌入所述通孔中的背面金属层的半导体芯片，以及多个导电结构， 将所述半导体芯片的前表面处的电极与所述第一组第一接触焊盘中的对应的第一接触焊盘连接。

公开(公告)号：US08642385B2

公开(公告)日：2014-02-04

申请号：US13205864

申请日：2011-08-09

申请人： Yan Xun Xue ,  Ping Huang ,  Yueh-Se Ho ,  Hamza Yilmaz ,  Jun Lu ,  Ming-Chen Lu

发明人： Yan Xun Xue ,  Ping Huang ,  Yueh-Se Ho ,  Hamza Yilmaz ,  Jun Lu ,  Ming-Chen Lu

IPC分类号： H01L23/498 ,  H01L21/78

CPC分类号： H01L21/76898 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05571 ,  H01L2224/1184 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： The present invention proposes a package for semiconductor device and the fabrication method for integrally encapsulating a whole semiconductor chip within a molding compound. In the semicondcutor device package, bonding pads distributed on the top of the chip are redistributed into an array of redistributed bonding pads located in an dielectric layer by utilizing the redistribution technique. The electrodes or signal terminals on the top of the semiconductor chip are connected to an electrode metal segment on the bottom of the chip by conductive materials filled in through holes formed in a silicon substrate of a semiconductor wafer. Furthermore, the top molding portion and the bottom molding portion seal the semiconductor chip completely, thus providing optimum mechanical and electrical protections.

摘要翻译： 本发明提出了一种用于半导体器件的封装以及用于将整个半导体芯片整体封装在模塑料中的制造方法。 在半封装器件封装中，通过利用再分配技术，分布在芯片顶部的焊盘重新分布到位于介质层中的再分布焊盘的阵列中。 半导体芯片的顶部上的电极或信号端子通过填充在半导体晶片的硅衬底中形成的通孔中的导电材料连接到芯片底部的电极金属段。 此外，顶部模制部分和底部模制部分完全密封半导体芯片，从而提供最佳的机械和电气保护。

公开(公告)号：US08952509B1

公开(公告)日：2015-02-10

申请号：US14031283

申请日：2013-09-19

申请人： Hamza Yilmaz ,  Yueh-Se Ho ,  Yan Xun Xue ,  Jun Lu ,  Xiaotian Zhang ,  Zhi Qiang Niu ,  Ming-Chen Lu ,  Liang Zhao ,  YuPing Gong ,  GuoFeng Lian

发明人： Hamza Yilmaz ,  Yueh-Se Ho ,  Yan Xun Xue ,  Jun Lu ,  Xiaotian Zhang ,  Zhi Qiang Niu ,  Ming-Chen Lu ,  Liang Zhao ,  YuPing Gong ,  GuoFeng Lian

IPC分类号： H01L25/07 ,  H01L23/495 ,  H01L25/00

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： The present invention discloses a stacked dual MOSFET package structure and a preparation method thereof. The stacked dual MOSFET package structure comprises a lead frame unit having a die paddle, a first lead and a second lead; a first chip flipped and attached on a top surface of a main paddle of the die paddle; a second chip attached on a bottom surface of the main paddle; and a metal clip mounted on the back of the flipped first chip and electrically connecting an electrode at the back of the first chip to the first lead. A top surface of a metal bump arranged on each electrode at the front of the second chip, a bottom surface of the die pin of the die paddle, a bottom surface of a lead pin of the second lead, and a bottom surface of the first lead are located on the same plane.

摘要翻译： 本发明公开了一种叠层双MOSFET封装结构及其制备方法。 堆叠双MOSFET封装结构包括具有管芯焊盘，第一引线和第二引线的引线框架单元; 第一芯片翻转并附接在模板的主桨的顶表面上; 附接在主桨的底表面上的第二芯片; 以及安装在翻转的第一芯片的背面上并将第一芯片背面的电极电连接到第一引线的金属夹。 布置在第二芯片的前面的每个电极上的金属凸块的顶表面，模板的模具销的底表面，第二引线的引脚的底表面和第一引脚的底表面 导线位于同一平面上。

公开(公告)号：US20130037935A1

公开(公告)日：2013-02-14

申请号：US13205864

申请日：2011-08-09

申请人： Yan Xun Xue ,  Ping Huang ,  Yueh-Se Ho ,  Hamza Yilmaz ,  Jun Lu ,  Ming-Chen Lu

发明人： Yan Xun Xue ,  Ping Huang ,  Yueh-Se Ho ,  Hamza Yilmaz ,  Jun Lu ,  Ming-Chen Lu

IPC分类号： H01L23/498 ,  H01L21/78

CPC分类号： H01L21/76898 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05571 ,  H01L2224/1184 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： The present invention relates to a package for semiconductor device and the fabrication method for integrally encapsulating a whole semiconductor chip within a molding compound. In the semicondcutor device package, bonding pads distributed on the top of the chip are redistributed into an array of redistributed bonding pads located in an dielectric layer by utilizing the redistribution technique. The electrodes or signal terminals on the top of the semiconductor chip are connected to an electrode metal segment on the bottom of the chip by conductive materials filled in through holes formed in a silicon substrate of a semiconductor wafer. Furthermore, the top molding portion and the bottom molding portion seal the semiconductor chip completely, thus providing optimum mechanical and electrical protections.

摘要翻译： 本发明涉及一种用于半导体器件的封装以及用于将整个半导体芯片整体封装在模塑料中的制造方法。 在半封装器件封装中，通过利用再分配技术，分布在芯片顶部的焊盘重新分布到位于介质层中的再分布焊盘的阵列中。 半导体芯片的顶部上的电极或信号端子通过填充在半导体晶片的硅衬底中形成的通孔中的导电材料连接到芯片底部的电极金属段。 此外，顶部模制部分和底部模制部分完全密封半导体芯片，从而提供最佳的机械和电气保护。

公开(公告)号：US08703545B2

公开(公告)日：2014-04-22

申请号：US13408185

申请日：2012-02-29

申请人： Zhiqiang Niu ,  Ming-Chen Lu ,  Yan Xun Xue ,  Yan Huo ,  Hua Pan ,  Guo Feng Lian ,  Jun Lu

发明人： Zhiqiang Niu ,  Ming-Chen Lu ,  Yan Xun Xue ,  Yan Huo ,  Hua Pan ,  Guo Feng Lian ,  Jun Lu

IPC分类号： H01L21/56 ,  H01L23/495

CPC分类号： H01L23/3107 ,  H01L21/565 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/73 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor package is provided with an Aluminum alloy lead-frame without noble metal plated on the Aluminum base lead-frame. Aluminum alloy material with proper alloy composition and ratio for making an aluminum alloy lead-frame is provided. The aluminum alloy lead-frame is electroplated with a first metal electroplating layer, a second electroplating layer and a third electroplating layer in a sequence. The lead-frame electroplated with the first, second and third metal electroplating layers is then used in the fabrication process of a power semiconductor package including chip connecting, wire bonding, and plastic molding. After the molding process, the area of the lead-frame not covered by the molding compound is electroplated with a fourth metal electroplating layer that is not easy to be oxidized when exposing to air.

摘要翻译： 半导体封装设置有没有贵金属的铝合金引线框架，镀在铝基底引线框架上。 提供具有适当的合金组成和制造铝合金引线框架的比例的铝合金材料。 铝合金引线框架依次电镀有第一金属电镀层，第二电镀层和第三电镀层。 然后，利用第一，第二和第三金属电镀层电镀的引线框架用于包括芯片连接，引线接合和塑性模制的功率半导体封装的制造过程中。 在模制过程之后，未被模塑料覆盖的引线框架的区域用暴露于空气中不容易氧化的第四金属电镀层电镀。