Invention Grant
- Patent Title: Inner L-spacer for replacement gate flow
- Patent Title (中): 内部L型间隔器用于更换浇口流
-
Application No.: US14022317Application Date: 2013-09-10
-
Publication No.: US09087917B2Publication Date: 2015-07-21
- Inventor: Chet Vernon Lenox , Seung-Chul Song , Brian K. Kirkpatrick
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank Cimino
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763 ; H01L21/8234 ; H01L27/092
Abstract:
An integrated circuit is formed by removing a sacrificial gate dielectric layer and a sacrificial gate to form a gate cavity. A conformal dielectric first liner is formed in the gate cavity and a conformal second liner is formed on the first liner. A first etch removes the second liner from the bottom of the gate cavity, leaving material of the second liner on sidewalls of the gate cavity. A second etch removes the first liner from the bottom of the gate cavity exposed by the second liner, leaving material of the first liner on the bottom of the gate cavity under the second liner on the sidewalls of the gate cavity. A third etch removes the second liner from the gate cavity, leaving an L-shaped spacers of the first liner in the gate cavity. A permanent gate dielectric layer and replacement gate are formed in the gate cavity.
Public/Granted literature
- US20150069516A1 INNER L-SPACER FOR REPLACEMENT GATE FLOW Public/Granted day:2015-03-12
Information query
IPC分类:
