发明授权
- 专利标题： Si and SiGeC on a buried oxide layer on a substrate
- 专利标题（中）： Si和SiGeC在基底上的掩埋氧化物层上
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申请号： US13150440申请日： 2011-06-01
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公开(公告)号： US09087925B2公开(公告)日： 2015-07-21
- 发明人: Xuefeng Liu , Robert M. Rassel , Steven H. Voldman
- 申请人： Xuefeng Liu , Robert M. Rassel , Steven H. Voldman
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony Canale
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/762 ; H01L27/12 ; H01L21/8238 ; H01L21/8249 ; H01L27/06 ; H01L27/092
摘要：
Semiconductor structures and methods of forming semiconductor structures, and more particularly to structures and methods of forming SiGe and/or SiGeC buried layers for SOI/SiGe devices. An integrated structure includes discontinuous, buried layers having alternating Si and SiGe or SiGeC regions. The structure further includes isolation structures at an interface between the Si and SiGe or SiGeC regions to reduce defects between the alternating regions. Devices are associated with the Si and SiGe or SiGeC regions.
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