发明授权
- 专利标题： Light-emitting device and manufacturing method thereof
- 专利标题（中）： 发光元件及其制造方法
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申请号： US13370958申请日： 2012-02-10
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公开(公告)号： US09088002B2公开(公告)日： 2015-07-21
- 发明人: Hisao Ikeda , Satoshi Seo , Shunpei Yamazaki
- 申请人： Hisao Ikeda , Satoshi Seo , Shunpei Yamazaki
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP2011-027998 20110211
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L51/50
摘要：
An object of the present invention is to decrease the conductivity of a hole-injection layer (or a hole-transport layer) containing molybdenum oxide without decreasing the amount of molybdenum oxide so that crosstalk is prevented from occurring. A light-emitting element includes, between an anode and a cathode, an EL layer including at least a hole-injection layer and a light-emitting layer. In the light-emitting element, the hole-injection layer is provided between the anode and the light-emitting layer, and the hole-injection layer contains molybdenum oxide and an additive. The additive may be an alkali metal, an alkaline earth metal, a substance having a HOMO level of lower than or equal to −5.8 eV, or a substance having a hole mobility of lower than or equal to 10−7 cm2/Vs.
公开/授权文献
- US20120205633A1 Light-Emitting Device and Manufacturing Method Thereof 公开/授权日：2012-08-16
信息查询
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