Invention Grant
- Patent Title: Additives to improve the performance of a precursor source for cobalt deposition
- Patent Title (中): 用于提高钴沉积前体源的性能的添加剂
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Application No.: US14134087Application Date: 2013-12-19
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Publication No.: US09090964B2Publication Date: 2015-07-28
- Inventor: James M. Blackwell , Daniel B. Bergstrom , Scott B. Clendenning , Patricio E. Romero
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakey, Sokoloff, Taylor & Zafman LLP
- Main IPC: C23C16/08
- IPC: C23C16/08 ; C23C16/16 ; C23C16/18 ; C23C16/06

Abstract:
Methods of forming cobalt films utilizing a cobalt precursor comprising an additive are described. Those methods may include adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule that is coupled with a deposition tool, and then forming a cobalt film using the cobalt precursor comprising the additive. Non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule.
Public/Granted literature
- US20150176119A1 ADDITIVES TO IMPROVE THE PERFORMANCE OF A PRECURSOR SOURCE FOR COBALT DEPOSITION Public/Granted day:2015-06-25
Information query
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