Invention Grant
- Patent Title: Field emission devices and methods for making the same
- Patent Title (中): 场发射装置及其制作方法
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Application No.: US14250932Application Date: 2014-04-11
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Publication No.: US09099272B2Publication Date: 2015-08-04
- Inventor: Neal R. Rueger
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01J21/00
- IPC: H01J21/00 ; H01J9/18 ; B82Y15/00 ; H01J21/04 ; H01J21/10 ; H01J9/02 ; H01J63/02 ; B82Y99/00

Abstract:
The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.
Public/Granted literature
- US20140273706A1 FIELD EMISSION DEVICES AND METHODS FOR MAKING THE SAME Public/Granted day:2014-09-18
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