发明授权
- 专利标题: Three-dimensional semiconductor memory devices and method of fabricating the same
- 专利标题(中): 三维半导体存储器件及其制造方法
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申请号: US13415388申请日: 2012-03-08
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公开(公告)号: US09099347B2公开(公告)日: 2015-08-04
- 发明人: Jang-Gn Yun , Kwang Soo Seol , Youngwoo Park
- 申请人: Jang-Gn Yun , Kwang Soo Seol , Youngwoo Park
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2011-0042706 20110504
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L27/115
摘要:
Provided are three-dimensional semiconductor memory devices and methods of fabricating the same. The device may include an electrode structure extending in a first direction and including electrodes and insulating patterns which are alternately and repeatedly stacked on a substrate, and vertical active patterns penetrating the electrode structure. At least an uppermost electrode of the electrodes is divided into a plurality of physically isolated segments arranged in the first direction. The segments of the uppermost electrode are electrically connected to each other.