发明授权
US09099597B2 Light emitting diode element with porous SiC emitting by donor acceptor pair
有权
具有由供体受体对发射的多孔SiC的发光二极管元件
- 专利标题： Light emitting diode element with porous SiC emitting by donor acceptor pair
- 专利标题（中）： 具有由供体受体对发射的多孔SiC的发光二极管元件
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申请号： US13259705申请日： 2010-03-26
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公开(公告)号： US09099597B2公开(公告)日： 2015-08-04
- 发明人: Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Takuya Nishimura , Fumiharu Teramae , Toshiyuki Kondo
- 申请人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Takuya Nishimura , Fumiharu Teramae , Toshiyuki Kondo
- 申请人地址： JP Nagoya-Shi, Aichi
- 专利权人： MEIJO UNIVERSITY
- 当前专利权人： MEIJO UNIVERSITY
- 当前专利权人地址： JP Nagoya-Shi, Aichi
- 代理机构： Roberts Mlotkowski Safran & Cole P.C.
- 优先权： JP2009-080543 20090327
- 国际申请： PCT/JP2010/055383 WO 20100326
- 国际公布： WO2010/110427 WO 20100930
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/08 ; H01L33/16 ; H01L33/12 ; H01L33/34
摘要：
A light emitting diode is provided which can obtain emission at the shorter wavelength side of the emission range of normal 6H-type SiC doped with B and N. A porous layer 124 consisting of single crystal 6H-type SiC of porous state is formed on a SiC substrate 102 of a light emitting diode element 100. Visible light is created from blue color to green color when the porous layer 124 is excited by ultra violet light emitted from the nitride semiconductor layer.
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