公开(公告)号：US09099597B2

公开(公告)日：2015-08-04

申请号：US13259705

申请日：2010-03-26

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

IPC分类号： H01L33/00 ,  H01L33/08 ,  H01L33/16 ,  H01L33/12 ,  H01L33/34

CPC分类号： H01L33/08 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/343

摘要： A light emitting diode is provided which can obtain emission at the shorter wavelength side of the emission range of normal 6H-type SiC doped with B and N. A porous layer 124 consisting of single crystal 6H-type SiC of porous state is formed on a SiC substrate 102 of a light emitting diode element 100. Visible light is created from blue color to green color when the porous layer 124 is excited by ultra violet light emitted from the nitride semiconductor layer.

摘要翻译： 提供一种发光二极管，其可以获得掺杂有B和N的正常6H型SiC的发射范围的较短波长侧的发射。由多孔状态的单晶6H型SiC组成的多孔层124形成在 发光二极管元件100的SiC衬底102.当从氮化物半导体层发射的紫外线激发多孔层124时，可见光由蓝色到绿色产生。

公开(公告)号：US20120037923A1

公开(公告)日：2012-02-16

申请号：US13259705

申请日：2010-03-26

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Takuya Nishimura ,  Fumiharu Teramae ,  Toshiyuki Kondo

IPC分类号： H01L33/02

CPC分类号： H01L33/08 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/343

摘要： [PROBLEM] To provide a light emitting diode which can obtain emission at shorter wavelength side of emission range of normal 6H-type SiC doped with B and N, and a method for manufacturing the same.[MEANS FOR SOLVING] Porous layer 124 consisting of single crystal 6H-type SiC of porous state is formed on a SiC substrate 102 of a light emitting diode element 100 such that visible light which is from blue color to green color when the porous layer 124 is excited by ultra violet light emitted from nitride semiconductor layer.

摘要翻译： [问题]提供一种能够获得掺杂有B和N的正常6H型SiC的发射范围的较短波长侧的发光二极管及其制造方法。 [解决方案]由多孔状态的单晶6H型SiC构成的多孔层124形成在发光二极管元件100的SiC衬底102上，使得当多孔层124的蓝色到绿色的可见光 被从氮化物半导体层发射的紫外线激发。

公开(公告)号：US08941136B2

公开(公告)日：2015-01-27

申请号：US13394543

申请日：2010-08-23

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

IPC分类号： H01L33/00 ,  H01L33/22 ,  H01L33/40

CPC分类号： H01L33/10 ,  H01L33/007 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0058

摘要： A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.

摘要翻译： 半导体发光元件包括：半导体堆叠部，其包括发光层，从发光层射出的光入射的衍射面，形成在比所述发光层的光波长长的时间内形成的凸部或凹部 光并且短于光的相干长度，其中衍射面根据布拉格的衍射条件以多模式反射入射光，并根据布拉格的衍射条件将入射光透射到多模中，并且反射面反射多模光 在衍射面衍射并使多模光再次入射到衍射面。 半导体堆叠部分形成在衍射面上。

公开(公告)号：US20120228656A1

公开(公告)日：2012-09-13

申请号：US13394543

申请日：2010-08-23

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

IPC分类号： H01L33/10 ,  H01L33/00

CPC分类号： H01L33/10 ,  H01L33/007 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0058

摘要： [PROBLEM] A light extraction efficiency increases by suppressing a reflection of a semiconductor layer and a transparent substrate.[MEANS FOR SOLVING] A semiconductor light emitting element comprising a semiconductor stack part including a light emitting layer is formed on a main surface of a substrate, a diffractive face that light emitted from the light emitting layer is incident to, that convex portions or concave portions are formed in a period which is longer than optical wavelength of the light and is shorter than coherent length of the light, is formed on a main surface side of the substrate, and a reflective face which reflects light diffracted at the diffractive face and let this light be incident to the diffractive face again is formed on a back surface side of the substrate.

摘要翻译： [问题]通过抑制半导体层和透明基板的反射来提高光提取效率。 解决方案包括发光层的半导体堆叠部分的半导体发光元件形成在基板的主表面上，从发光层发射的光入射到该凸部或凹部的衍射面 部分形成在比光的光波长长并且短于光的相干长度的周期中，形成在基板的主表面侧上，反射面反射在衍射面衍射的光，并使 在基板的背面侧形成有再次入射到衍射面的光。

公开(公告)号：US20080277670A1

公开(公告)日：2008-11-13

申请号：US12152016

申请日：2008-05-12

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

IPC分类号： H01L33/00

CPC分类号： B23K35/262 ,  C22C13/00 ,  H01B1/026

摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

摘要翻译： 本发明公开了一种SiC晶体，其包括：浓度大于5×10 17 cm -3的受主杂质; 供体杂质浓度小于1×10 9 -3 -3，且大于受体杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×10 17 cm -3的受主杂质的SiC荧光层和位于 浓度小于1×10 9 cm -3以上且大于受主杂质的浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

公开(公告)号：US20070145557A1

公开(公告)日：2007-06-28

申请号：US11710744

申请日：2007-02-26

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

IPC分类号： H01L23/02

CPC分类号： H01L33/22 ,  H01L33/38 ,  H01L2933/0016

摘要： The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.

摘要翻译： 本发明公开了一种制造半导体器件的方法，包括：提供半透明部分; 通过气相沉积在半透明部分上形成由一种或多种金属构成的覆盖层; 向覆盖层提供动能以形成周期性掩模; 通过使用周期性掩模在半透明部分上形成周期性结构。

公开(公告)号：US20060043396A1

公开(公告)日：2006-03-02

申请号：US11215406

申请日：2005-08-29

申请人： Michinobu Tsuda ,  Masataka Imura ,  Akira Honshio ,  Motoaki Iwaya ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Michinobu Tsuda ,  Masataka Imura ,  Akira Honshio ,  Motoaki Iwaya ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01L29/22

CPC分类号： H01L33/32 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/16

摘要： An epitaxial substrate for manufacturing field effect transistor (FET) that has heterojunction structure consisting of at least a channel layer made of gallium nitride or gallium indium nitride and a barrier layer made of aluminum gallium nitride formed successively on the principal plane of the sapphire substrate, wherein the principal plane of the sapphire substrate semiconductor is inclined from (01-12) plane toward (0001) plane by an off-angle α that is in a range of 0°

摘要翻译： 一种用于制造场效应晶体管（FET）的外延衬底，其具有至少由氮化镓或氮化铟镓制成的沟道层和由氮化铝镓制成的势垒层在蓝宝石衬底的主面上连续形成的异质结结构， 其中所述蓝宝石衬底半导体的主平面从（01-12）面朝向（0001）面倾斜角度α为0°

公开(公告)号：US07855385B2

公开(公告)日：2010-12-21

申请号：US12152016

申请日：2008-05-12

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

IPC分类号： H01L31/0312

CPC分类号： B23K35/262 ,  C22C13/00 ,  H01B1/026

摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

摘要翻译： 本发明公开了一种SiC晶体，其包含：浓度大于5×1017cm-3的受主杂质; 供体杂质浓度小于1×1019 cm-3，大于受主杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×1017cm-3的受主杂质的SiC荧光层和浓度小于1×1019 cm -3并且大于 受体杂质浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

公开(公告)号：US07732826B2

公开(公告)日：2010-06-08

申请号：US11603977

申请日：2006-11-21

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Hiroyuki Kinoshita

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Hiroyuki Kinoshita

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/04 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32

摘要： The present invention discloses a semiconductor, includes one or more luminescent layers; and one or more electron gas layers with two-dimensional electron gases that are distributed parallel to the luminescent layers.

摘要翻译： 本发明公开了一种半导体，包括一个或多个发光层; 以及具有与发光层平行分布的二维电子气体的一个或多个电子气体层。

公开(公告)号：US07756189B2

公开(公告)日：2010-07-13

申请号：US11897895

申请日：2007-08-31

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01S3/08 ,  H01S5/00 ,  G01B9/02 ,  G01B11/02

CPC分类号： G03F7/70408 ,  G03F7/70025 ,  H01L33/22 ,  H01S3/082 ,  H01S3/109 ,  H01S3/2207

摘要： The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator so as to serve as a narrowband wavelength filter; a beam splitter dividing laser light output outside the laser resonator into two light fluxes; and an interference optic system causing the light fluxes to interfere with each other on a target to be exposed.

摘要翻译： 本发明公开了一种双光束干涉曝光装置，包括：设置在激光谐振器中的激光光源; 设置在所述激光谐振器中的用于将由所述激光源输出的激光转换成高次谐波的单次谐波产生装置; 在激光谐振器中提供的标准具，用作窄带波长滤波器; 分束器将激光谐振器外部的激光输出分成两束光束; 以及使得光束在要暴露的目标上彼此干扰的干涉光学系统。