Invention Grant
US09110829B2 MRAM smart bit write algorithm with error correction parity bits 有权
具有纠错奇偶校验位的MRAM智能位写入算法

MRAM smart bit write algorithm with error correction parity bits
Abstract:
Some aspects of the present disclosure relate a method. The method attempts to write an expected multi-bit word to a memory location in memory. After writing of the multi-bit word has been attempted, an actual multi-bit word is read from the memory location. The actual multi-bit word is then compared with the expected multi-bit word to identify a number of erroneous bits and a number of correct bits stored in the memory location. The number of erroneous bits is re-written to the memory location without attempting to re-write the correct bits to the memory location.
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