Invention Grant
US09111907B2 Silicide protection during contact metallization and resulting semiconductor structures
有权
接触金属化期间的硅化物保护和由此产生的半导体结构
- Patent Title: Silicide protection during contact metallization and resulting semiconductor structures
- Patent Title (中): 接触金属化期间的硅化物保护和由此产生的半导体结构
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Application No.: US14146399Application Date: 2014-01-02
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Publication No.: US09111907B2Publication Date: 2015-08-18
- Inventor: Vimal K. Kamineni , Ruilong Xie , Robert Miller
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Wayne F. Reinke, Esq.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/28 ; H01L29/417 ; H01L21/285 ; H01L29/78 ; H01L29/66

Abstract:
A semiconductor transistor has a structure including a semiconductor substrate, a source region, a drain region and a channel region in between the source region and the drain region. A metal gate, having a top conductive portion of tungsten is provided above the channel region. A first silicon nitride protective layer over the source region and the drain region and a second silicon nitride protective layer over the gate region are provided. The first silicon nitride protective layer and the second silicon nitride protective layer are configured to allow punch-through of the first silicon nitride protective layer while preventing etching through the second silicon nitride protective layer. Source and drain silicide is protected by avoiding fully etching a gate opening unless either the etching used would not harm the silicide, or the silicide and source and drain contacts are created prior to fully etching an opening to the gate for a gate contact.
Public/Granted literature
- US20150187896A1 SILICIDE PROTECTION DURING CONTACT METALLIZATION AND RESULTING SEMICONDUCTOR STRUCTURES Public/Granted day:2015-07-02
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