发明授权
- 专利标题： Through via structure and method
- 专利标题（中）： 通过结构和方法
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申请号： US13619233申请日： 2012-09-14
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公开(公告)号： US09112007B2公开(公告)日： 2015-08-18
- 发明人: Yung-Chi Lin , Hsin-Yu Chen , Lin-Chih Huang , Tsang-Jiuh Wu , Wen-Chih Chiou
- 申请人： Yung-Chi Lin , Hsin-Yu Chen , Lin-Chih Huang , Tsang-Jiuh Wu , Wen-Chih Chiou
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/768 ; H01L23/31 ; H01L23/48 ; H01L23/525 ; H01L23/532 ; H01L23/00
摘要：
An apparatus comprises a through via formed in a substrate. The through via is coupled between a first side and a second side of the substrate. The through via comprises a bottom portion adjacent to the second side of the substrate, wherein the bottom portion is formed of a conductive material. The through via further comprises sidewall portions formed of the conductive material and a middle portion formed between the sidewall portions, wherein the middle portion is formed of a dielectric material.
公开/授权文献
- US20140077374A1 Through Via Structure and Method 公开/授权日：2014-03-20
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